Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
614	Request Pricing	-

BAT62-07W

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT62-07W
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

614 In Stock

Popular Products

2N2222A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;

Details

2N2222A

Texas Instruments

2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).

Details

SMBJ18CA

Hy Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Daco Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Fairchild Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ISO1050DUBR

Texas Instruments

ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.

Details

MURS160T3G

Onsemi

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

Details

BSS138

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;

Details

1552200168

Molex

WIRE AND CABLE;

Details

RC0805FR-0710KL

Yageo

Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.

Details

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

Details

2N2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM7805CT

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;

Details

SS14

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Comchip Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58-360

TE Connectivity

TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.

Details

2N7002

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

Details

BAT62-07W Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	1 V
Config:	SEPARATE, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
Sub-Category:	Other Diodes
Surface Mount:	YES
Maximum Reverse Current:	10 uA
No. of Terminals:	4
Terminal Position:	DUAL
Maximum Diode Capacitance:	.6 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	CATHODE
Moisture Sensitivity Level (MSL):	1
Reverse Test Voltage:	40 V
Maximum Repetitive Peak Reverse Voltage:	40 V
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
Qualification:	Not Qualified
Schottky Barrier Type:	LOW BARRIER
Maximum Power Dissipation:	.1 W

Category Top Products

SPD221M

Onsemi

MIXER DIODE; Surface Mount: NO; Diode Element Material: GALLIUM ARSENIDE;

BA892

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PMBD352215

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA481116

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2852-TR1

Broadcom

Broadcom's HSMS-2852-TR1 is a Schottky mixer diode with 2 elements, operating from 0.915 GHz to 4 GHz. It features a small outline package, Gull Wing terminals, and can withstand temperatures up to 150°C. Ideal for microwave applications requiring high-frequency mixing and detection.

BAT6207WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-113ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAR11-AR2

STMicroelectronics

STMicroelectronics' BAR11-AR2 is a single Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C in very high to ultra high frequency bands. Its glass package and isolated case connection make it suitable for microwave applications.

1PS70SB82T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NSR15DW1T1

Onsemi

NSR15DW1T1 by Onsemi is a Schottky mixer diode with 2 elements, max reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C and has a package style of small outline for microwave applications. The diode has low capacitance at 1pF and low reverse current at 0.05uA, making it suitable for high-frequency signal detection in various electronic devices.

BA592E6327

Infineon Technologies

BA592E6327 by Infineon Technologies is a single microwave mixer diode with a max forward voltage of 1V and very high frequency band. It has a peak repetitive peak reverse voltage of 35V, making it suitable for applications requiring small outline surface mount diodes in high-frequency circuits. The package material is plastic/epoxy with matte tin terminal finish, operating up to 125°C.

PMBD353,215

NXP Semiconductors

PMBD353,215 by NXP Semiconductors is a microwave mixer diode with 2 elements in series connected configuration. Operating at ultra-high frequency, it has a max forward voltage of 0.6V and can handle up to 0.03A output current. This Schottky diode is ideal for applications requiring high-frequency signal mixing and detection in compact electronic devices.

NSVMMBD354LT1G

Onsemi

NSVMMBD354LT1G by Onsemi is a surface mount microwave mixer & detector diode with max operating temperature of 150 °C. It features matte tin terminal finish, silicon diode element material, and peak reflow temperature of 260°C. Ideal for applications requiring high frequency signal mixing and detection in electronic circuits.

BAT15-099E6327XT

Infineon Technologies

MIXER DIODE; Maximum Power Dissipation: .1 W; Diode Element Material: SILICON; Technology: SCHOTTKY; Maximum Forward Voltage (VF): .41 V; Peak Reflow Temperature (C): NOT SPECIFIED;

MMBD355LT3

Onsemi

MMBD355LT3 by Onsemi is a microwave mixer & detector diode with common anode config, 2 elements, and ultra high frequency band. It features a max diode capacitance of 1 pF, small outline package style, and tin lead terminal finish. Ideal for applications requiring high frequency signal detection in compact electronic devices.

5082-2835

Agilent Technologies

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

934055282115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR28

STMicroelectronics

BAR28 by STMicroelectronics is a Schottky mixer diode designed for very high to ultra-high frequency applications. It features a max operating temp of 200 °C, 2 pF capacitance, and operates within -65°C to 200°C. Ideal for microwave mixing and detection tasks.

MMBD352WT1G

Onsemi

MMBD352WT1G by Onsemi is a microwave mixer & detector diode with 2 elements, Schottky technology, and ultra high frequency band. It is ideal for applications requiring small outline package style, surface mount capability, and max operating temperature of 150°C.

1PS70SB84,115

NXP Semiconductors

1PS70SB84,115 by NXP Semiconductors is a microwave mixer diode with Schottky technology. It operates in the ultra-high frequency band and has a max forward voltage of 0.7V. This series-connected diode with two elements is ideal for applications requiring high-frequency signal mixing and detection.