BAT15-04R-E6433 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
634	Request Pricing	-

BAT15-04R-E6433

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT15-04R-E6433
Description

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Operating Frequency: 12 GHz;
Datasheet

Datasheet

634 In Stock

Popular Products

1N4148WS

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM358N

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

IRLML6401TRPBF

Infineon Technologies

IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

SMBJ18CA

General Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20U

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;

Details

261

Micronetics

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

Details

BSS84PH6327XTSA2

Infineon Technologies

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.

Details

SMBJ18CA

International Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

SS14

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

Details

LM358N

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LM555CM

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LM358MX

ROHM

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

Details

MMBF170LT1G

Onsemi

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

Details

2N2222A

Vishay Sprague

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;

Details

1N4148WS

First Components International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;

Details

1N4148

Wuxi Xuyang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAT15-04R-E6433 Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Operating Temperature:	150 Cel
Maximum Operating Frequency:	12 GHz
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

MMDL770T1

Onsemi

MMDL770T1 by Onsemi is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 1V. This small outline diode is ideal for applications requiring high-frequency signal mixing and detection.

BAT14-110S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Maximum Forward Voltage (VF): .44 V; Maximum Operating Temperature: 150 Cel;

DAN222M3T5G

Onsemi

DAN222M3T5G by Onsemi is a microwave mixer & detector diode with common cathode, 2 elements config. It has a max diode capacitance of 3.5 pF and operates at up to 150°C. Ideal for applications requiring small outline package style and high-speed performance in RF circuits.

DB2J314

Panasonic

Panasonic's DB2J314 is a single-config microwave mixer diode with Schottky technology. Operating at 125°C, it has a max forward voltage of 0.4V and output current of 0.03A, suitable for L Band applications in surface-mount setups due to its small outline package style.

MMSD301T1G

Onsemi

MMSD301T1G by Onsemi is a single microwave mixer & detector diode with very high to ultra high frequency range. It has a max diode capacitance of 1.5 pF and operates b/w -55°C to 125°C. Ideal for efficiency applications, it features a Schottky technology with a max forward voltage of 0.6V and peak output current of 0.2A.

STDD15-05WFILM

STMicroelectronics

STDD15-05WFILM by STMicroelectronics is a dual-element mixer diode designed for microwave applications. It features a max capacitance of 1 pF, operates up to 150 °C, and comes in a compact surface mount package. Ideal for high-frequency signal processing tasks.

SMMSD301T1G

Onsemi

The Onsemi SMMSD301T1G is a Schottky mixer diode with a max forward voltage of 0.45V and repetitive peak reverse voltage of 30V. It operates at up to 125°C, making it suitable for microwave applications requiring high temperature resistance and low output current demands. This surface-mount diode is ideal for use in microwave mixer and detector circuits.

SMMBD701LT1G

Onsemi

SMMBD701LT1G by Onsemi is a Schottky mixer diode with a max operating temperature of 125°C. It features surface mount capability and matte tin terminal finish, suitable for microwave applications. With silicon diode element material, it can withstand peak reflow temperature of 260°C for up to 30 seconds.

HSMS-2812-TR2G

Broadcom

HSMS-2812-TR2G by Broadcom is a microwave mixer diode with 2 elements, Schottky technology, and 2 pF diode capacitance. It is ideal for applications requiring series connected diodes in small outline packages for high-frequency operations up to 150°C. The device features a max forward voltage of 0.41 V and a repetitive peak reverse voltage of 20 V, making it suitable for various RF and microwave circuit designs.

5082-2835

Asi Semiconductor

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT15-04R-E6433

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Operating Frequency: 12 GHz;

BAT15-115S

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

SMS7621-092

Skyworks Solutions

SMS7621-092 by Skyworks Solutions is a microwave mixer diode with Schottky technology. It operates in K band frequency range, has 2 elements, and a low barrier Schottky diode element material. Ideal for applications requiring common bipolar terminal configuration and surface mount package style, with a max power dissipation of 0.075W.

BA892-07F

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

MDX655

Texas Instruments

The Texas Instruments MDX655 is a surface-mount microwave mixer diode with a frequency range of 25-40 GHz. It has an impedance range of 50-200 ohm and operates up to 100°C. Ideal for high-frequency applications requiring gallium arsenide diode technology.

HSMS-2855-TR1G

Broadcom

Broadcom's HSMS-2855-TR1G is a Schottky mixer diode with 2 elements, operating from 0.915 GHz to 4 GHz in L Band. It features a small outline package with separate configuration and Gull Wing terminals. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.

MBD770DWT1

Onsemi

MBD770DWT1 by Onsemi is a microwave mixer & detector diode with 2 elements, suitable for very high frequency to ultra high frequency applications. It features a max forward voltage of 1V, Schottky technology, and a max repetitive peak reverse voltage of 70V. This surface-mount diode has a small outline package style and operates at up to 125 °C.

BAT1704E6327HTSA1

Infineon Technologies

BAT1704E6327HTSA1 by Infineon Technologies is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.15 W power dissipation. Ideal for applications in very high to ultra high frequency bands, it features a small outline package shape and gull wing terminal form for surface mount assembly.

SMMBD301LT3G

Onsemi

The Onsemi SMMBD301LT3G is a Schottky mixer diode with a max forward voltage of 0.45V and max output current of 0.2A. It operates at temperatures up to 150°C, making it suitable for microwave applications requiring high-speed signal detection and mixing capabilities. This surface-mount diode has a repetitive peak reverse voltage of 30V, ideal for compact electronic designs in various industries.

BAT15-114S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON;