Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BAT15-014ES

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT15-014ES
Description

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Datasheet

Datasheet

Not In Stock

Popular Products

2N2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148WS

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ULN2803A

Vishay Intertechnology

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;

Details

MBR0520LT3G

Onsemi

MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Bay Linear

Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;

Details

BSS84-7-F

Diodes Incorporated

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.

Details

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

Details

1N4148

Wuxi Xuyang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

NE555D

NXP Semiconductors

SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

2N2222A

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MBRS130LT3G

Onsemi

MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.

Details

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

STM32H743XIH6

STMicroelectronics

STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.

Details

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

Details

FDN306P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

Details

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

Details

BAV99

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

STM32H753BIT6

STMicroelectronics

STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.

Details

BAT15-014ES Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Config:	SINGLE
Diode Type:	MIXER DIODE
Maximum Noise Figure:	5.5 dB
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	UNSPECIFIED
Maximum Diode Capacitance:	.6 pF
Package Style (Meter):	MICROWAVE
Technology:	SCHOTTKY
Schottky Barrier Type:	MEDIUM BARRIER
JESD-30 Code:	O-CXMW-G2
No. of Elements:	1
Package Shape:	ROUND
Maximum Power Dissipation:	.1 W
Terminal Form:	GULL WING
Additional Features:	HIGH RELIABILITY
Maximum Operating Temperature:	150 Cel

Category Top Products

BA592

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD353LT1G

Onsemi

MMBD353LT1G by Onsemi is a series connected, center tap diode with 2 elements. It operates in the ultra high frequency band and has a max diode capacitance of 1 pF. This small outline mixer diode is suitable for microwave applications with an operating temperature range from -55 to 150°C.

BAT45

STMicroelectronics

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2850

Broadcom

Broadcom's HSMS-2850 is a surface-mount microwave mixer diode with operating frequencies from 0.915 GHz to 5.8 GHz. It offers a min tangential signal sensitivity of 55 dBm, making it ideal for applications requiring high-frequency mixing and detection in temperature ranges from -65°C to 150°C.

BAT68E6327HTSA1

Infineon Technologies

BAT68E6327HTSA1 by Infineon Technologies is a single Schottky mixer diode with a max power dissipation of 0.15W. It operates in the very high frequency to ultra high frequency band and has a max diode capacitance of 1pF. This small outline package diode is ideal for microwave mixing and detection applications.

BAT62-07W

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1503WE6327HTSA1

Infineon Technologies

Infineon's BAT1503WE6327HTSA1 is a Schottky mixer diode with 0.35 pF capacitance, suitable for X Band applications. With a max power dissipation of 0.1 W and operating temperature of 150°C, it offers high performance in microwave circuits. This single-config diode in small outline package is ideal for surface mount designs.

BAT15-014H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT14-073H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-2800-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-286K-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT17-06WE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SBL-221

Onsemi

MIXER DIODE; Surface Mount: YES; Minimum Operating Frequency: 20 GHz; Diode Element Material: GALLIUM ARSENIDE; Maximum Operating Frequency: 40 GHz; Maximum Operating Temperature: 150 Cel;

DB2J50100L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

DB5S310K0R

Panasonic

The Panasonic DB5S310K0R is a microwave mixer & detector diode with 2 elements, suitable for very high frequency applications. It has a max reverse current of 200 uA and operates b/w -40 to 85 °C. This small outline diode features a plastic/epoxy package body, surface mount capability, and a rectangular shape.

BAR19-AZ1

STMicroelectronics

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

DDC2354-240

Alpha Industries

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

DB2730800L

Panasonic

The Panasonic DB2730800L is a single mixer diode with very high frequency range. It features a plastic/epoxy package, surface mount capability, and small outline shape. Ideal for applications requiring dual terminals in temperature range of -40 to 85°C.

TGD0624SSMX

Texas Instruments

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SPD-221P

Onsemi

MIXER DIODE; Surface Mount: YES; Diode Element Material: GALLIUM ARSENIDE; Minimum Operating Frequency: 3.9 GHz; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 11 GHz;