Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
893	Request Pricing	-

BAT14-124S

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-124S
Description

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 9 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

893 In Stock

Popular Products

LM358AN

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LL4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WS

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM107H/883

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

Details

1N4148

Toshiba

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Plessey Semiconductors Discrete Components Div

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Forward International Electronics

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

1N4148

Semitron

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

Details

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

Details

BSS138

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;

Details

CC0603KRX7R9BB103

Yageo

Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

LM555CMX

Texas Instruments

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

Details

M24308/2-1F

TE Connectivity

TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM7805CT

Silicon Group

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

Details

1N4148WS

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Details

BAT14-124S Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Noise Figure:	9 dB
Maximum Operating Temperature:	150 Cel
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

BA481143

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BA891,115

NXP Semiconductors

The NXP Semiconductors BA891,115 is a single microwave mixer diode with a very high frequency range. It has a max forward voltage of 1V and can handle up to 0.1A output current. This small outline diode is ideal for applications requiring high-frequency signal mixing in electronic circuits.

MMBD301LT1

Leshan Radio

MIXER DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 125 Cel;

BA482

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAR10

STMicroelectronics

BAR10 by STMicroelectronics is a single mixer diode with a Schottky technology, operating in the very high frequency to ultra high frequency band. Featuring a max forward voltage of 1V and max output current of 0.035A, it is ideal for applications requiring microwave mixing and detection in environments ranging from -65 °C to 200°C.

BAT17-05E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

DB5S310K0R

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT17-05

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMSD301T1

Onsemi

MMSD301T1 by Onsemi is a single Schottky mixer diode with a max forward voltage of 0.6V and repetitive peak reverse voltage of 30V. It operates in very high to ultra high frequency bands, has a small outline package style, and can handle temperatures up to 125 °C. Ideal for microwave applications requiring surface mount technology.

PMBD353,215

NXP Semiconductors

PMBD353,215 by NXP Semiconductors is a microwave mixer diode with 2 elements in series connected configuration. Operating at ultra-high frequency, it has a max forward voltage of 0.6V and can handle up to 0.03A output current. This Schottky diode is ideal for applications requiring high-frequency signal mixing and detection in compact electronic devices.

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

BAT45-AR2

STMicroelectronics

BAT45-AR2 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1 V and can handle up to 30 A output current at an operating temperature of 125 °C.

BAT15-095R

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

MBD301G

Onsemi

MBD301G by Onsemi is a single Schottky mixer diode with ultra high frequency band. It has a max diode capacitance of 1.5 pF and can operate in temperatures ranging from -55 to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high frequency mixing and detection capabilities.

PMBD352235

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5712-AZ2

STMicroelectronics

1N5712-AZ2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C. Ideal for VHF to UHF applications due to its isolated case connection and 0.43 W power dissipation capability. Its glass package and axial terminal position make it suitable for high-frequency circuits.

HSMS-282L-BLKG

Broadcom

HSMS-282L-BLKG by Broadcom is a Schottky mixer diode with 3 elements, operating in C band. It has a max forward voltage of 0.34V and reverse current of 0.1uA, suitable for microwave applications requiring high frequency performance at temperatures ranging from -65°C to 150°C.

MMBD353LT1G

Onsemi

MMBD353LT1G by Onsemi is a series connected, center tap diode with 2 elements. It operates in the ultra high frequency band and has a max diode capacitance of 1 pF. This small outline mixer diode is suitable for microwave applications with an operating temperature range from -55 to 150°C.

BAT14-074P

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT45-AR1

STMicroelectronics

BAT45-AR1 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1 V and can handle up to 30 A output current at an operating temperature of 125 °C.