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TIP112
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ManufacturerInchange Semiconductor
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Manufacturer's Part NumberTIP112
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
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Datasheet
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DetailsTIP112 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 2 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 500 |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 50 W |
| Maximum Collector-Emitter Voltage: | 100 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Collector-Base Capacitance: | 100 pF |
| Case Connection: | COLLECTOR |
| Maximum VCEsat: | 2.5 V |
| Maximum Power Dissipation Ambient: | 2 W |
