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TIP122

Manufacturer

Power Innovations
Manufacturer's Part Number

TIP122
Description

Power Bipolar Transistors; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
Datasheet

Datasheet

10550 In Stock

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WIRE AND CABLE;

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MBRA340T3G

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1N4148

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TIP122 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
JEDEC-95 Code:	TO-220AB
Surface Mount:	NO

Category Top Products

TIP122G

Onsemi

TIP122G by Onsemi is a NPN power BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With an hFE of 1000 and fT of 4MHz, this transistor operates up to 150°C.

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

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2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.

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NPN; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;

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Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;

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TIP122

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;

D44H11

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;

TIP110

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NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;

TIP115

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PNP; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Minimum DC Current Gain (hFE): 1000; JESD-609 Code: e0;

TIP35C

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;

BD243C

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum VCEsat: 1.5 V;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

TIP142

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NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 60 V;

BUT30V

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STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.