Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AT45DB641E-MHN-T

Manufacturer

Dialog Semiconductor
Manufacturer's Part Number

AT45DB641E-MHN-T
Description

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Words Code: 64M;
Datasheet

Datasheet

Not In Stock

Popular Products

DS18B20

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;

Details

2N7002DWH6327XTSA1

Infineon Technologies

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

Details

BAV99

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

Details

BSS138

Weitron Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

Details

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

DS18B20+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;

Details

SMBJ18CA

Synsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Nexperia

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM358M

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

SMBJ18CA

Lite-on Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Kec

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;

Details

GRM155R71H103KA88D

Murata Manufacturing

The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.

Details

1N4148WT

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

DS18B20Z

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;

Details

AT45DB641E-MHN-T Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	64MX1
Maximum Seated Height:	.6 mm
Programming Voltage (V):	1.8
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Maximum Clock Frequency (fCLK):	85 MHz
No. of Words:	67108864 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-N8
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	HVSON
Width:	5 mm
Moisture Sensitivity Level (MSL):	1
Other Names:	-AT45DB641E-MHN-T AT45DB641E-MHN-TCT AT45DB641E-MHN-TTR AT45DB641E-MHN-TDKR
Memory Density:	67108864 bit
Memory IC Type:	FLASH
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Memory Width:	1
No. of Functions:	1
Length:	6 mm
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	2.3
Parallel or Serial:	SERIAL
Terminal Pitch:	1.27 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V

Category Top Products

M25P128-VMF6PB

Micron Technology

M25P128-VMF6PB by Micron Technology is a 16MX8 NOR type flash memory with 134217728 bit density. It operates at 3V, has a clock frequency of 50 MHz, and offers 10000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact devices.

MTFC8GAKAJCN-4MITTR

Micron Technology

Micron Technology's MTFC8GAKAJCN-4MITTR is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 52 MHz clock frequency, suitable for industrial applications. The package style is grid array with very thin profile and fine pitch, making it ideal for compact electronic devices.

IS21ES08G-JCLI-TR

Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution is an 8GX8 flash memory with 68719476736 bit density. Operating at 3.3V, it features a very thin profile grid array package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed synchronous flash memory with parallel interface.

AT45DB041E-SSHN2B-T

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

S29GL064S80TFV030

Infineon Technologies

S29GL064S80TFV030 by Infineon Technologies is an 8MX8 Flash Memory with 67108864 bit memory density and 80 ns max access time. It operates at a nominal voltage of 3V, suitable for industrial applications requiring fast and reliable data storage in a compact form factor. The package style is small outline, thin profile, shrink pitch, making it ideal for space-constrained designs that demand high-speed performance.

AT45DB161E-SSHD-B

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

S25FL128SAGMFI011

Infineon Technologies

S25FL128SAGMFI011 by Infineon Technologies is a NOR type Flash Memory with 32MX4 organization, operating at 133 MHz clock frequency. It has a 100000 write/erase cycle endurance and supports SPI serial bus type. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in compact devices.

S29AL016J70TFI010

Infineon Technologies

S29AL016J70TFI010 by Infineon Technologies is a 1MX16 NOR flash memory with 3V supply, operating from -40 to 85°C. It features asynchronous mode, 70ns access time, and 30mA max supply current. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact form factor.

AT25SF161-SSHD-T

Dialog Semiconductor

AT25SF161-SSHD-T by Dialog Semiconductor is a 16MX1 NOR Flash Memory with 3V supply, 104 MHz clock frequency, and SPI serial bus. Ideal for industrial applications, it offers 100K write/erase cycles, -40 to 85°C operating range, and compact dimensions of 4.925mm x 3.9mm x 1.75mm.

W25Q64JVSFIQ

Winbond Electronics

Winbond Electronics' W25Q64JVSFIQ is a 3.3V NOR flash memory with 8MX8 organization, SPI serial bus type, and 133 MHz clock frequency. Ideal for industrial applications, it offers 100000 write/erase cycles and operates in a temperature range of -40 to 85 °C.

AM29F010B-70JF

Intel

Intel's AM29F010B-70JF is a 128Kx8 NOR flash memory chip with 131,072 words. Operating at 5V, it offers 70ns access time and endurance of 1M cycles. Ideal for applications requiring fast data access and high reliability in a compact form factor.

IS25LP256D-JLLE-TR

Integrated Silicon Solution

IS25LP256D-JLLE-TR by Integrated Silicon Solution is a 32MX8 Flash Memory with 268Mbit density. Operating at 133MHz, it has a supply voltage range of 2.3V to 3.6V and temperature grade of INDUSTRIAL. Ideal for applications requiring high-speed data storage in compact devices like IoT sensors and industrial control systems.

SDCS2/32GBSP

Kingston Technology Company

The Kingston SDCS2/32GBSP is a Flash Memory chip with 32GX8 organization, NOR type technology, and 3.3V programming voltage. It is ideal for applications requiring high memory density (274877906944 bit) in a compact form factor (24mm x 32mm). Operating temperatures range from -25°C to 85°C, making it suitable for various industrial environments.

AT25SF641B-SHB-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

S29GL256S90TFI010

Infineon Technologies

S29GL256S90TFI010 by Infineon Technologies is a 32MX8 NAND flash memory with 256 sectors, operating at 3V. It features a small outline package with dual terminals and offers 100000 write/erase cycles. Ideal for applications requiring high endurance and fast access times in a compact form factor.

SST25VF040B-50-4I-SAF-T

Microchip Technology

SST25VF040B-50-4I-SAF-T by Microchip: NOR Flash Memory, 50MHz Clock, SPI Interface. Ideal for industrial applications with -40 to 85°C temp range. Offers 4Mbit memory density and 100K Write/Erase cycles.

S29GL128S90TFI023

Infineon Technologies

S29GL128S90TFI023 by Infineon Technologies is a 16MX8 NAND flash memory with 128 sectors and 3-STATE output. Operating at 3V, it offers fast access time of 90ns for applications requiring high-speed data storage. With a compact design and small outline package, it is ideal for devices needing reliable non-volatile memory solutions.

MT28EW256ABA1HPC-0SIT

Micron Technology

Micron Technology's MT28EW256ABA1HPC-0SIT is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers fast access time of 70ns for industrial applications. With a low profile grid array package, it supports asynchronous mode and parallel interface for high-speed data storage solutions.

MT25QL128ABA1EW7-0SIT

Micron Technology

Micron Technology's MT25QL128ABA1EW7-0SIT is a NOR flash memory with 128Mx1 organization, operating at 133MHz clock frequency. It features a small outline package suitable for industrial applications, offering high memory density of 134217728 bits. Ideal for devices requiring fast and reliable data storage in harsh environments.

SST26VF064BEUI-104I/SM

Microchip Technology

SST26VF064BEUI-104I/SM by Microchip: 64MX1 NOR Flash Memory with 104 MHz clock, SPI interface. Ideal for industrial applications, offers 100000 Write/Erase cycles and operates b/w -40 to 85 °C.