Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
S70FL01GSAGMFI013
-
ManufacturerCypress Semiconductor
-
Manufacturer's Part NumberS70FL01GSAGMFI013
-
DescriptionFLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;
-
Datasheet
Not In Stock
Popular Products
BAV99
Plessey Semiconductors Discrete Components Div
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DetailsIRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
DetailsMMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
DetailsBSS123LT1G
Onsemi
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
Details1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DetailsBSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
DetailsM85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
Details2N2222A
Electronic Transistors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Details2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DetailsLM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
DetailsMMBF170LT1G
Onsemi
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
DetailsLL4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DetailsLL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Details2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Details2N2222A
Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Details1N4148WS
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
Details1N4148
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DetailsSS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DetailsS70FL01GSAGMFI013 Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Standby Current: | .0006 Amp |
Organization: | 128MX8 |
Maximum Seated Height: | 2.65 mm |
Programming Voltage (V): | 3 |
Minimum Supply Voltage (Vsup): | 2.7 V |
Sub-Category: | Flash Memories |
Surface Mount: | YES |
Maximum Supply Current: | 200 mA |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 16 |
Maximum Clock Frequency (fCLK): | 133 MHz |
No. of Words: | 134217728 words |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Write Protection: | HARDWARE/SOFTWARE |
Technology: | CMOS |
JESD-30 Code: | R-PDSO-G16 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 85 Cel |
Endurance: | 1000000 Write/Erase Cycles |
Package Code: | SOP |
Width: | 7.5 mm |
Serial Bus Type: | SPI |
Memory Density: | 1073741824 bit |
Memory IC Type: | FLASH |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -40 Cel |
Memory Width: | 8 |
No. of Functions: | 1 |
Type: | NOR TYPE |
Qualification: | Not Qualified |
Package Equivalence Code: | SOP16,.4 |
Alternate Memory Width: | 1 |
Length: | 10.3 mm |
No. of Words Code: | 128M |
Nominal Supply Voltage / Vsup (V): | 3 |
Minimum Data Retention Time: | 20 |
Parallel or Serial: | SERIAL |
Terminal Pitch: | 1.27 mm |
Temperature Grade: | INDUSTRIAL |
Maximum Supply Voltage (Vsup): | 3.6 V |
Power Supplies (V): | 3/3.3 |