S25FL256SAGNFB000 by Cypress Semiconductor

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
291	$5.994	$1,744.400

S25FL256SAGNFB000

Manufacturer

Cypress Semiconductor
Manufacturer's Part Number

S25FL256SAGNFB000
Description

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

291 In Stock

Popular Products

1N4148

Multicomp Pro

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM555CMX

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

MBR1560CT

General Instrument

MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.

Details

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

Details

2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Sun Wai Electronic

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

LM107H/883

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

Details

LM358AN

Samsung

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

DS18B20Z+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;

Details

LM358M

Texas Instruments

LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.

Details

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

Details

LM317AEMP/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;

Details

LL4148

Microsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

M39029/58360

Souriau

CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;

Details

L7805CV

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;

Details

SS14

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

National Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

EPCS4SI8N

Intel

EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.

Details

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

Details

1N4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

S25FL256SAGNFB000 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	64MX4
Maximum Seated Height:	.8 mm
Programming Voltage (V):	3
Minimum Supply Voltage (Vsup):	2.7 V
Surface Mount:	YES
Maximum Supply Current:	100 mA
Terminal Finish:	MATTE TIN
Maximum Write Cycle Time (tWC):	500 ms
No. of Terminals:	8
Maximum Clock Frequency (fCLK):	133 MHz
No. of Words:	67108864 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PDSO-N8
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	HVSON
Width:	6 mm
Boot Block:	BOTTOM
Memory Density:	268435456 bit
Memory IC Type:	FLASH
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Memory Width:	4
No. of Functions:	1
Type:	NOR TYPE
Alternate Memory Width:	2
Length:	8 mm
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	3
Additional Features:	ALSO CONFIGURABLE AS 256M X 1
Parallel or Serial:	SERIAL
Terminal Pitch:	1.27 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V

Category Top Products

AT45DB081E-SSHN2B-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

S70FL01GSAGMFI013

Spansion

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

W25Q32JVZPIM

Winbond Electronics

W25Q32JVZPIM by Winbond Electronics is a 32Mb Flash Memory with synchronous operation at 133MHz. It has a supply voltage range of 2.7V to 3.6V, ideal for industrial applications requiring high-speed data storage in compact devices. The small outline package with dual terminals and no lead form factor makes it suitable for space-constrained designs.

N25Q064A11ESE40G

Micron Technology

Micron Technology's N25Q064A11ESE40G is a 64Mbit flash memory with synchronous operation, 108MHz clock frequency, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in small outline packages.

S25FL128LAGMFI010

Infineon Technologies

S25FL128LAGMFI010 by Infineon is a NOR type flash memory with 16MX8 organization, operating at up to 133 MHz clock frequency. It offers 100000 write/erase cycles and has a memory density of 134217728 bits. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage.

S25FL128SAGMFIR01

Infineon Technologies

S25FL128SAGMFIR01 by Infineon Technologies is a NOR type flash memory with 32Mx4 organization, operating at up to 133MHz clock frequency. It features 100,000 write/erase cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in a compact small outline package.

AT25SF641B-SHB-T

Renesas Electronics

Renesas Electronics AT25SF641B-SHB-T is a 64M NOR Flash Memory with SPI interface, operating at 104MHz. It offers 100K Write/Erase cycles and supports hardware/software write protection. Ideal for industrial applications requiring high endurance and reliable data storage in a compact package.

W25N01GVZEIGTR

Winbond Electronics

W25N01GVZEIGTR by Winbond Electronics is a 1Gx1 SLC NAND flash memory with 1073741824-bit memory density. It operates at up to 104MHz clock frequency, has a supply voltage range of 2.7V to 3.6V, and is suitable for industrial temperature grade applications. The package style is small outline with very thin profile, making it ideal for space-constrained designs requiring high-speed data storage.

MTFC2GMDEA-0MWTA

Micron Technology

MTFC2GMDEA-0MWTA by Micron Technology is a 2GX8 flash memory with 17179869184 bit density. Operating at 52 MHz, it has a very thin profile and fine pitch package style suitable for synchronous applications. With a voltage range of 2.7V to 3.6V, it is ideal for high-speed data storage in electronic devices.

S29GL064S70TFI020

Spansion

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

S29JL032J70TFI310

Infineon Technologies

S29JL032J70TFI310 by Infineon Technologies is a 2MX16 NOR flash memory with 3V nominal voltage. It features synchronous operation, 8K/64K sector size, and 70ns max access time. Ideal for industrial applications requiring fast data retrieval and reliable non-volatile storage in compact designs.

S25FL512SAGMFI010

Infineon Technologies

S25FL512SAGMFI010 by Infineon Technologies is a 64MX8 NOR flash memory with 512753664-bit density. Operating at 3V, it offers a max clock frequency of 133MHz and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in a compact small outline package.

S29GL256P10TFI010

Advanced Micro Devices

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP56,.8,20;

MT25QL01GBBB8ESF-0SIT

Micron Technology

Micron Technology's MT25QL01GBBB8ESF-0SIT is a 1Gx1 Flash Memory with 1073741824-bit memory density. It operates at 133MHz clock frequency and supports synchronous mode. Ideal for industrial applications requiring high-speed data storage in a small outline package.

IS21ES08GA-JQLI

Integrated Silicon Solution

IS21ES08GA-JQLI by Integrated Silicon Solution is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 3.3V programming voltage. It is suitable for applications requiring high-speed synchronous operation in devices such as smartphones, tablets, and digital cameras.

MT25QL512ABB8ESF-0SITTR

Micron Technology

Micron Technology's MT25QL512ABB8ESF-0SITTR is a 64MX8 NOR type flash memory with 133 MHz clock frequency. Operating at -40 to 85 °C, it has a serial SPI interface and 3V supply voltage. Ideal for industrial applications requiring high-speed data storage in compact form factors.

S25FL512SAGMFI013

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

S29GL128S90TFI023

Infineon Technologies

S29GL128S90TFI023 by Infineon Technologies is a 16MX8 NAND flash memory with 128 sectors and 3-STATE output. Operating at 3V, it offers fast access time of 90ns for applications requiring high-speed data storage. With a compact design and small outline package, it is ideal for devices needing reliable non-volatile memory solutions.

KLMAG1JETD-B041

Samsung

Samsung's KLMAG1JETD-B041 Flash Memory features 16GX8 organization, 1.8V programming voltage, and 137.4Gbit memory density. Ideal for compact devices due to its 0.8mm height, it operates b/w -25°C to 85°C temperatures with a width of 11.5mm and length of 13mm.

MT29F8G08ABABAWP-IT:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.