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TIP35C

Manufacturer

Comset Semiconductors
Manufacturer's Part Number

TIP35C
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
Datasheet

Datasheet

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TIP35C Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	3 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	25 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	15
No. of Terminals:	3
Maximum Power Dissipation (Abs):	125 W
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum VCEsat:	4 V
Maximum Power Dissipation Ambient:	3.5 W

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