Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4,933	Request Pricing	-

BFS17W

Manufacturer

Vishay Semiconductors
Manufacturer's Part Number

BFS17W
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
Datasheet

Datasheet

4933 In Stock

Popular Products

SMBJ18CA

Mde Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Rectron

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803ADW

Texas Instruments

ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.

Details

2N7002-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

Details

MBR0530T1G

Onsemi

MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.

Details

LM358N

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

USB2514BI-AEZG

Standard Microsystems

BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;

Details

LL4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

C1005X7R1E103K050BB

TDK

The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.

Details

2N7002

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

Details

FDV303N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;

Details

LM358M

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

BSS138

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

Details

LL4148

Weitron Technology

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WS

Rochester Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358AN

Texas Instruments

LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.

Details

LM555CMX

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

BFS17W Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	2400 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Moisture Sensitivity Level (MSL):	1

Category Top Products

MPS5179RLRP

Onsemi

MPS5179RLRP by Onsemi is a NPN RF BJT with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.

MPS6507

Onsemi

MPS6507 by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. It has a min hFE of 25 and fT of 800 MHz, making it ideal for amplifier applications. The package style is cylindrical with through-hole terminals and a max power dissipation of 0.625W.

MMBTH11

Onsemi

MMBTH11 by Onsemi is a NPN BJT transistor for RF applications. It operates in the very high frequency band with a max fT of 650 MHz. With a collector-emitter voltage of 25V and max power dissipation of 0.35W, it is ideal for amplifier circuits in small outline packages.

BFS17W

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;

BFS20,215

NXP Semiconductors

The NXP Semiconductors BFS20,215 is a single NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 40. It operates in the very high frequency band up to 450MHz and is suitable for applications requiring high-frequency amplification or switching.

HFA3096BZ

Intersil

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;

BFP405FH6327XTSA1

Infineon Technologies

BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.

HFA3096BZ

Integrated Device Technology

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Package Style (Meter): SMALL OUTLINE;

BFP405H6327XTSA1

Infineon Technologies

BFP405H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.025A IC, and 25000MHz fT. Ideal for L Band applications, it features a small outline package with Gull Wing terminals for surface mount amplification needs.

CA3083M96

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;

BFR93AE6327HTSA1

Infineon Technologies

BFR93AE6327HTSA1 by Infineon Technologies is a NPN RF BJT with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.3W, hFE of 70, and fT of 6000MHz. This transistor operates at up to 150°C and features a collector-emitter voltage of 12V.

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

2N3114

Texas Instruments

2N3114 by Texas Instruments is a NPN BJT transistor for RF applications. With max. power dissipation of 0.8W, it operates in the very high frequency band up to 40MHz. Ideal for amplifier circuits, it has a max. collector-emitter voltage of 150V and max. collector current of 0.2A.

2SC4399-3

Onsemi

RF Small Signal Bipolar Transistors;

NESG260234-T1-AZ

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e6;

2N2907AUB

Vpt Components

RF Small Signal Bipolar Transistors;

MPSH10G

Onsemi

MPSH10G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max power dissipation of 0.35W and operates in the ultra-high frequency band.

UMX5NTR

ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.

2N3570

Texas Instruments

2N3570 by Texas Instruments is a NPN BJT transistor with 4 terminals, 0.05A IC, and 1500MHz fT. Ideal for amplifier applications in the ultra high frequency band, it has a max operating temperature of 175°C and 0.2W power dissipation.

SS9018D

Onsemi

SS9018D by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 28, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.