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ULN2803AFWG(O,ELM)
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ManufacturerToshiba
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Manufacturer's Part NumberULN2803AFWG(O,ELM)
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DescriptionNPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G18; Maximum Collector-Emitter Voltage: 50 V;
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Datasheet
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DetailsULN2803AFWG(O,ELM) Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .5 A |
| Configuration: | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 1000 |
| Terminal Finish: | TIN SILVER COPPER |
| JESD-609 Code: | e1 |
| No. of Terminals: | 18 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G18 |
| No. of Elements: | 8 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
