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ULN2803AFWG(O,ELM)

Manufacturer

Toshiba
Manufacturer's Part Number

ULN2803AFWG(O,ELM)
Description

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G18; Maximum Collector-Emitter Voltage: 50 V;
Datasheet

Datasheet

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ULN2803AFWG(O,ELM) Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Configuration:	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	1000
Terminal Finish:	TIN SILVER COPPER
JESD-609 Code:	e1
No. of Terminals:	18
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G18
No. of Elements:	8
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOGIC LEVEL COMPATIBLE

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