Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SD1229-1

Manufacturer

STMicroelectronics
Manufacturer's Part Number

SD1229-1
Description

NPN; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Transistor Element Material: SILICON;
Datasheet

Datasheet

Not In Stock

Popular Products

SSL-LXA228SRC-TR11

Lumex

SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.

Details

SS14

Rfe International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358AN

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

RK73H2ATTD10R0F

Koa Speer Electronics

RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.

Details

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

ULN2803A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

Details

BAV99

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

0462-201-16141

TE Connectivity

TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.

Details

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

Details

1N4148

Gulf Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

STM32F401CDY6TR

STMicroelectronics

STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.

Details

1N4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Protek Devices

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Philips Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

Details

M39029/58-360

Tri-star Electronics International

CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;

Details

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM358N

Samsung

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

C1206C104M5RACTU

KEMET Corporation

KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

SD1229-1 Technical Details

TYPE	DESCRIPTION
Transistor Element Material:	SILICON
Sub-Category:	BIP RF Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0

Category Top Products

S822T

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; JESD-609 Code: e3;

BFR106E6327HTSA1

Infineon Technologies

BFR106E6327HTSA1 by Infineon Technologies is a NPN RF Small Signal BJT transistor with a max power dissipation of 0.7W and a min DC current gain of 70. It is commonly used as an amplifier in applications requiring high frequency performance up to 5000 MHz.

BFR93AR

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

MMBT5179

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

2N5332

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .1 A;

BFS17

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

CA3083M96

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;

2N3137

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .15 A;

BFR360FH6327XTSA1

Infineon Technologies

BFR360FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14GHz. It is designed for amplifier applications in the S Band frequency range. This small outline package has a max operating temp of 150°C and collector-emitter voltage of 6V, making it suitable for high-frequency amplification needs.

MMBTH81

Onsemi

The Onsemi MMBTH81 is a PNP RF BJT with 3 terminals, operating in the VHF band. It has a max power dissipation of 0.35W and transition frequency of 600MHz. Ideal for amplifier applications due to its high collector-emitter voltage and small outline package style.

BF494

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;

2N4260

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1.6 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;

2N4429

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .425 A;

2N918

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

MMBTH10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

BFP620H7764XTSA1

Infineon Technologies

BFP620H7764XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 65 GHz, collector-emitter voltage of 2.3V, and collector current of 0.08A. Ideal for high-frequency amplifier circuits in automotive electronics due to AEC-Q101 compliance.

HFA3134IHZ96

Intersil

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .026 A; Minimum DC Current Gain (hFE): 48;

BFU550XVL

NXP Semiconductors

The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

START450TR

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

15GN03FA-TL-H

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;