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SD1222-6

Manufacturer

STMicroelectronics
Manufacturer's Part Number

SD1222-6
Description

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
Datasheet

Datasheet

1829 In Stock

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SD1222-6 Technical Details

TYPE	DESCRIPTION
Transistor Element Material:	SILICON
Sub-Category:	BIP RF Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	NO

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The Toshiba 2SC2995 is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 350MHz. Ideal for amplifier applications, it has a max power dissipation of 0.2W and operates at up to 125°C. Its package style is in-line with through-hole terminals.

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AT-41511-TR1G

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MMBT5179

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MSC3130T1

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MSC3130T1 by Onsemi is a NPN BJT transistor for amplifier applications. It operates in the ultra high frequency band with fT of 1400 MHz. With a max power dissipation of 0.2W and max operating temp of 150 °C, it's ideal for small outline packages requiring high-speed performance.