Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4,175	$2.945	$12,295.375

M95M01-DWDW3TP/K

Manufacturer

STMicroelectronics
Manufacturer's Part Number

M95M01-DWDW3TP/K
Description

EEPROM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words: 131072 words;
Datasheet

Datasheet

4175 In Stock

Popular Products

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

Details

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

Details

1N4148

Nte Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Itt Components

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

Details

1N4148WT

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Forward International Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Details

2N2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;

Details

BAV99

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;

Details

1N4148

Weitron Technology

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);

Details

KSZ9031RNXIC

Microchip Technology

KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.

Details

1N4148WS-7-F

Diodes Incorporated

1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.

Details

LM358M

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LIS2DH12TR

STMicroelectronics

LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.

Details

E8WSDC12-32.768KTR

Abracon

Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.

Details

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

OPA2277UA/2K5

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

2N2222A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

American Power Devices

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;

Details

M95M01-DWDW3TP/K Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.000002 Amp
Organization:	128KX8
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Minimum Supply Voltage (Vsup):	2.5 V
Sub-Category:	EEPROMs
Surface Mount:	YES
Maximum Supply Current:	5 mA
Terminal Finish:	NICKEL PALLADIUM GOLD
Maximum Write Cycle Time (tWC):	4 ms
No. of Terminals:	8
Maximum Clock Frequency (fCLK):	10 MHz
No. of Words:	131072 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Screening Level:	AEC-Q100
Write Protection:	HARDWARE/SOFTWARE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G8
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Endurance:	4000000 Write/Erase Cycles
Package Code:	TSSOP
Width:	3 mm
Moisture Sensitivity Level (MSL):	1
Serial Bus Type:	SPI
Other Names:	497-14463-2 497-14463-6 497-14463-1
Memory Density:	1048576 bit
Memory IC Type:	EEPROM
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP8,.25
Length:	4.4 mm
No. of Words Code:	128K
Minimum Data Retention Time:	40
Peak Reflow Temperature (C):	260
Parallel or Serial:	SERIAL
Terminal Pitch:	.65 mm
Temperature Grade:	AUTOMOTIVE
Maximum Supply Voltage (Vsup):	5.5 V
Power Supplies (V):	3/5

Category Top Products

AT24C64D-XHM-T

Microchip Technology

AT24C64D-XHM-T by Microchip Technology is a 8KX8 EEPROM with a max clock frequency of 1 MHz. It operates in synchronous mode and has a min supply voltage of 2.5V. This memory IC is commonly used for industrial applications requiring high endurance and reliable data storage.

CAT24C64WI-GT3

Catalyst Semiconductor

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 8192 words;

CAT24C256YI-GT3

Onsemi

CAT24C256YI-GT3 by Onsemi is an EEPROM with 32KX8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 262144 bit memory density. Ideal for industrial applications requiring reliable data storage with a max clock frequency of 0.4 MHz.

CAT24C256WI-GT3

Catalyst Semiconductor

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Length: 4.9 mm;

DS2430AP

Maxim Integrated

DS2430AP by Maxim Integrated is a 256-bit EEPROM with 100,000 write/erase cycles. Operating at 5V, it features a serial bus type of 1-WIRE and can endure industrial temperatures from -40 to 85°C. Ideal for applications requiring reliable non-volatile memory in compact spaces.

CAT24C04WIG

Catalyst Semiconductor

CAT24C04WIG by Catalyst Semiconductor is an EEPROM with 512x8 organization, 4096-bit memory density, and 1000000 write/erase cycles endurance. It operates on a power supply of 2/5V, has a max operating temperature of 85°C, and uses I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

AT28LV010-20JU-T

Microchip Technology

AT28LV010-20JU-T by Microchip Technology is a 128Kx8 EEPROM with 100,000 Write/Erase Cycles. Operating at 3.3V, it offers a max access time of 200ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact chip carrier packages.

DS2431

Dallas Semiconductor

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Shape: RECTANGULAR; No. of Words: 1024 words; Nominal Supply Voltage / Vsup (V): 3.3;

AT24C02C-SSHM-T

Atmel

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

24LC16BT-I/ST

Microchip Technology

24LC16BT-I/ST by Microchip Technology is an EEPROM with 2Kx8 organization, 16384-bit memory density, and 1000000 write/erase cycles. It operates in synchronous mode at a max clock frequency of 0.4 MHz and has a serial I2C bus type. Ideal for industrial applications requiring reliable non-volatile memory storage with hardware write protection.

M24C04-WMN6P

STMicroelectronics

M24C04-WMN6P by STMicroelectronics is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

24LC1025-E/SN

Microchip Technology

24LC1025-E/SN by Microchip Technology is an EEPROM with 128KX8 organization, operating at 3V/5V. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

24LC64-E/SN

Microchip Technology

24LC64-E/SN by Microchip Technology is an EEPROM with a memory density of 65536 bit. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. This small outline package is commonly used in automotive applications for its durability and resistance to high temperatures.

DS2431G+T&R

Analog Devices

DS2431G+T&R by Analog Devices is a 1024-bit EEPROM with 1-WIRE serial bus. It operates at 3.3V, has 50000 write/erase cycles endurance, and -40 to 85°C temperature range. Ideal for industrial applications requiring secure data storage in a compact chip carrier package.

XCF02SVO20C

Xilinx

Xilinx XCF02SVO20C is a 2MX1 EEPROM with 2097152-bit memory density. Operating at 3.3V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it is ideal for configuration memory in devices requiring low standby current and high endurance.

M24C16-WBN6P

STMicroelectronics

STMicroelectronics M24C16-WBN6P is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte 1010MMMR and offers a memory density of 16384 bits. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

24LC256T-I/SNG

Microchip Technology

24LC256T-I/SNG by Microchip Tech is a 32Kx8 EEPROM with I2C control byte. Operating at 3/5V, it offers 1000000 write/erase cycles and -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory storage.

AT25160B-SSHL-T

Atmel

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

CAT25256YI-GT3

Onsemi

CAT25256YI-GT3 by Onsemi is a 32KX8 EEPROM with SPI serial bus, 262144 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates at 5 MHz clock frequency, has a supply voltage range of 1.8V to 5.5V, and offers hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

M24C32-FMC6TG

STMicroelectronics

STMicroelectronics' M24C32-FMC6TG is an EEPROM with 4Kx8 organization, operating at 1.8V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and can endure up to 1,000,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.