IRF640 by Semiconductor Technology

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IRF640

Manufacturer

Semiconductor Technology
Manufacturer's Part Number

IRF640
Description

Other Transistors;
Datasheet

Datasheet

7992 In Stock

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Category Top Products

BD138 by Iskra Semic Capacitors Industry

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

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2SC5200O by Inchange Semiconductor

2SC5200O

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BFT92W/A2,115 by NXP Semiconductors

BFT92W/A2,115

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The NXP Semiconductors BFT92W/A2,115 is a PNP transistor with a single configuration and surface mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20 (hFE), and max operating temp of 150°C. Ideal for low-power applications in electronics requiring precise signal amplification.

TIP127 by Forward International Electronics

TIP127

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BD139 by National Semiconductor

BD139

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

TIP115 by Philips Semiconductors

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BC846B by Secos

BC846B

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

2N4401 by Vishay Intertechnology

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Vishay Intertechnology's 2N4401 NPN transistor has a max power dissipation of 0.35W, min DC current gain of 100, and max collector current of 0.6A. Ideal for applications requiring high frequency operation up to 250MHz in a single configuration at temperatures up to 150°C.

TIP120 by Intersil

TIP120

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NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);

D44H8 by Samsung

D44H8

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;

MJE350 by Inchange Semiconductor

MJE350

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PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

PZT2222A by Secos

PZT2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;

2N3019 by Semiconductors

2N3019

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

FDV302P-NB8V001 by Fairchild Semiconductor

FDV302P-NB8V001

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FDV302P-NB8V001 by Fairchild Semiconductor is a P-CHANNEL FET with 0.12A max drain current and 0.35W max power dissipation. It operates in enhancement mode, suitable for surface mount applications up to 150°C. Ideal for low-power circuit designs requiring single configuration transistors.

TIP110 by Panasonic

TIP110

Panasonic

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: Tin/Lead (Sn/Pb);

MPSA42 by Infineon Technologies

MPSA42

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

BS170 by Calogic

BS170

Calogic

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BC847C by Sprague Electric

BC847C

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;