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K4W1G1646G-BC11

Manufacturer

Samsung
Manufacturer's Part Number

K4W1G1646G-BC11
Description

DDR3 DRAM; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Interleaved Burst Length: 8;
Datasheet

Datasheet

Not In Stock

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K4W1G1646G-BC11 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.01 Amp
Organization:	64MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	195 mA
Terminal Finish:	MATTE TIN
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	933 MHz
No. of Words:	67108864 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Package Code:	FBGA
Moisture Sensitivity Level (MSL):	1
Input/Output Type:	COMMON
Memory Density:	1073741824 bit
Sequential Burst Length:	8
Memory IC Type:	DDR3 DRAM
JESD-609 Code:	e3
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	8
Maximum Access Time:	.195 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	1.5
Terminal Pitch:	.8 mm
Power Supplies (V):	1.5

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