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K4H561638N-LCB3

Manufacturer

Samsung
Manufacturer's Part Number

K4H561638N-LCB3
Description

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4H561638N-LCB3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.003 Amp
Organization:	16MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	120 mA
Terminal Finish:	MATTE TIN
No. of Terminals:	66
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	16777216 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology:	CMOS
JESD-30 Code:	R-PDSO-G66
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	70 Cel
Package Code:	TSSOP
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	268435456 bit
Sequential Burst Length:	2,4,8
Memory IC Type:	DDR1 DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP66,.46
Refresh Cycles:	8192
Interleaved Burst Length:	2,4,8
Maximum Access Time:	.7 ns
No. of Words Code:	16M
Nominal Supply Voltage / Vsup (V):	2.5
Peak Reflow Temperature (C):	260
Terminal Pitch:	.635 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	2.5

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