Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EL8172FSZ-T7
-
ManufacturerRenesas Electronics
-
Manufacturer's Part NumberEL8172FSZ-T7
-
DescriptionINSTRUMENTATION AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
-
Datasheet
Not In Stock
Popular Products
1N4148
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Details
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
BAV99
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
Details
2N2222A
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Details
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
Details
LL4148
Onsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Details
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
Details
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
Details
1N4148WS
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
2N2222A
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
Details
BAV99
Toshiba
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
Details
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
Details
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
1N4148
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
Details
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
DetailsEL8172FSZ-T7 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | Plastic/Epoxy |
| Maximum Time At Peak Reflow Temperature (s): | 30 s |
| Maximum Seated Height: | 0.068 in (1.7272 mm) |
| Maximum Supply Voltage Limit: | 5.5 V |
| Sub-Category: | Instrumentation Amplifiers |
| Maximum Supply Current: | 110 μA |
| Surface Mount: | Yes |
| Terminal Finish: | Matte Tin |
| No. of Terminals: | 8 |
| Maximum Input Offset Voltage: | 0.7 µV |
| Terminal Position: | Dual |
| Package Style (Meter): | Small Outline |
| JESD-30 Code: | R-PDSO-G8 |
| Package Shape: | Rectangular |
| Terminal Form: | Gull Wing |
| Maximum Operating Temperature: | 125 °C (257 °F) |
| Package Code: | SOP |
| Amplifier Type: | Instrumentation Amplifier |
| Nominal Slow Rate: | 0.55 V/us |
| Width: | 0.154 in (3.9116 mm) |
| Moisture Sensitivity Level (MSL): | 3 |
| Packing Method: | Tape And Reel |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -40 °C (-40 °F) |
| Maximum Average Bias Current (IIB): | 4 nA |
| No. of Functions: | 1 |
| Minimum Common Mode Reject Ratio: | 75 dB |
| Package Equivalence Code: | SOP8,.25 |
| Length: | 0.193 in (4.9022 mm) |
| Nominal Supply Voltage / Vsup (V): | 5 V |
| Peak Reflow Temperature (C): | 260 °C (500 °F) |
| Terminal Pitch: | 0.05 in (1.27 mm) |
| Maximum Input Offset Current (IIO): | 500 pA |
| Temperature Grade: | Automotive |