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TIP120

Manufacturer

Rectron
Manufacturer's Part Number

TIP120
Description

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-609 Code: e3; Package Style (Meter): FLANGE MOUNT;
Datasheet

Datasheet

6266 In Stock

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BAV99

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OPA2227UA

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MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.

Details

TIP120 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	5 A
Configuration:	DARLINGTON
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1000
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Category Top Products

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NPN; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;

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BCP56-16

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.33 W; Maximum Collector Current (IC): 1 A;

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NJVMJD31CT4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 10, VCEO of 100V, and IC of 3A. Ideal for amplifier applications, it operates b/w -65 to 150°C and has a transition frequency of 3MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSFM-T3;

BD138

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TIP127

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

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PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; JEDEC-95 Code: TO-220;

ULN2003APWR

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ULN2003APWR by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, ideal for switching applications. This surface-mount transistor in plastic/epoxy package is designed for high-performance complex configurations.

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The Onsemi MJL21194G is a NPN power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power amplification needs.

BD138

Continental Device India

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