Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EEVFK1E102Q
-
ManufacturerPanasonic
-
Manufacturer's Part NumberEEVFK1E102Q
-
DescriptionALUMINUM ELECTROLYTIC CAPACITOR; Mounting Feature: SURFACE MOUNT; Capacitance: 1000 uF; Rated DC Voltage (URdc): 25 V; Maximum Operating Temperature: 105 Cel; Dielectric Material: ALUMINUM (WET);
-
Datasheet
Not In Stock
Popular Products
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Details1N4148
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
DetailsLL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DetailsSS14
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Details1N4148
Shenzhen Yixinsemi Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
DetailsBSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
DetailsCRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
Details261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
DetailsBAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DetailsBAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DetailsMBR0520LT1
Onsemi
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
DetailsBAV99
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Details2N7002
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
DetailsNDT2955
Onsemi
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
DetailsSN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
DetailsMURS160T3G
Onsemi
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
DetailsLM107H
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
Details1N4148WT
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DetailsLM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
DetailsEEVFK1E102Q Technical Details
TYPE | DESCRIPTION |
---|---|
Capacitor Type: | ALUMINUM ELECTROLYTIC CAPACITOR |
Dielectric Material: | ALUMINUM (WET) |
Tan Delta: | 0.14 |
Terminal Finish: | TIN |
Leakage Current (mA): | 0.25 |
No. of Terminals: | 2 |
Package Style (Meter): | SMT |
Package Shape: | CYLINDRICAL PACKAGE |
Polarity: | POLARIZED |
Maximum Operating Temperature: | 105 Cel |
Height: | 13.5 mm |
Width: | 13.5 mm |
Diameter: | 12.5 mm |
Packing Method: | TR, EMBOSSED, 13 INCH |
Size Code: | 5353 |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Mounting Feature: | SURFACE MOUNT |
Length: | 13.5 mm |
Terminal Shape: | FLAT |
Positive Tolerance: | 20 % |
Ripple Current (mA): | 825 |
Capacitance: | 1000 uF |
Negative Tolerance: | 20 % |
Reference Standard: | AEC-Q200 |
Rated DC Voltage (URdc): | 25 V |