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TIP115G

Manufacturer

Onsemi
Manufacturer's Part Number

TIP115G
Description

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
Datasheet

Datasheet

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TIP115G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-220AB
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	500
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	50 W
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR

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