Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,398	Request Pricing	-

SBL-804

Manufacturer

Onsemi
Manufacturer's Part Number

SBL-804
Description

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: GALLIUM ARSENIDE; Maximum Operating Frequency: 100 GHz; Minimum Operating Frequency: 11 GHz;
Datasheet

Datasheet

2398 In Stock

Popular Products

LM358AN

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N7002

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

1N4148

Rfe International

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;

Details

1N4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Concord Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;

Details

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

Details

OHN3140U

Tt Electronics Plc

OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.

Details

LL4148

Vishay Intertechnology

Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.

Details

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N2222A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;

Details

CDSOT23-SM712

Bourns

Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.

Details

1N4148

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;

Details

LM107H/883C

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;

Details

LM317T

Inchange Semiconductor

Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;

Details

NE555D

STMicroelectronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BAV99

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

Details

1N4148

Dc Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SBL-804 Technical Details

TYPE	DESCRIPTION
Diode Element Material:	GALLIUM ARSENIDE
Minimum Operating Frequency:	11 GHz
Diode Type:	MIXER DIODE
Maximum Operating Temperature:	150 Cel
Maximum Operating Frequency:	100 GHz
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

HSMS-2808-TR1G

Broadcom

HSMS-2808-TR1G by Broadcom is a Schottky mixer diode with 4 elements, 2 pF capacitance, and 70V peak reverse voltage. It comes in a small outline package for surface mount applications at up to 150°C. Ideal for microwave mixing and detection due to its high performance and reliability.

BAT14-113ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SBL-803

Onsemi

SBL-803 by Onsemi is a surface mount microwave mixer diode with GaAs element. It operates from 11 GHz to 100 GHz, with max temp of 150 °C. Ideal for high-frequency applications in radar systems and communication equipment.

DB2730900L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-090S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .44 V; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -55 Cel;

1PS66SB17,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

SPD221M

Onsemi

MIXER DIODE; Surface Mount: NO; Diode Element Material: GALLIUM ARSENIDE;

BAT62-07L4

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-099RE6327

Infineon Technologies

Infineon BAT15-099RE6327 is a Schottky mixer diode with 4 elements, X Band frequency band, and 0.35 pF diode capacitance. It operates b/w -55 to 150 °C and has a max power dissipation of 0.1 W. Ideal for microwave applications requiring low barrier Schottky technology in small outline packages.

BAT14-099RE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2825-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

MMSD701T1

Onsemi

MMSD701T1 by Onsemi is a single Schottky mixer diode with a max forward voltage of 1V. It operates in the very high frequency to ultra high frequency band, suitable for microwave applications. This surface-mount diode has a max power dissipation of 0.225W and can handle up to 70V repetitive peak reverse voltage.

SBL-122

Onsemi

SBL-122 by Onsemi is a surface mount mixer diode with GaAs element. It operates from 3.9 GHz to 12 GHz, ideal for microwave applications. With a max temp of 150 °C, it's suitable for high-frequency circuits in various electronic devices.

1PS79SB17,115

NXP Semiconductors

1PS79SB17,115 by NXP Semiconductors is a single Schottky mixer diode with a max forward voltage of 0.35V and a max repetitive peak reverse voltage of 4V. It has a diode capacitance of 1pF, operates at temperatures up to 150°C, and is suitable for microwave applications requiring high-frequency signal mixing and detection.

BAT1705WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT17-04E6327

Infineon Technologies

BAT17-04E6327 by Infineon Technologies is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.35 V forward voltage. It operates in the very high frequency to ultra high frequency band for applications like microwave mixing and detection. This small outline package has a max power dissipation of 0.15 W and can withstand temperatures up to 150°C.

TMMBAT29

STMicroelectronics

TMMBAT29 by STMicroelectronics is a Schottky mixer diode with ultra-high frequency band, 1 pF diode capacitance, and 7 dB max noise figure. It is used in microwave applications for signal mixing and detection due to its low forward voltage of 0.55 V and high output current of 30 A.

BAS70-07

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BA592E6433XT

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD355LT1G

Onsemi

MMBD355LT1G by Onsemi is a microwave mixer & detector diode with common anode config and 2 elements. Operating in the ultra high frequency band, it has a max power dissipation of 0.225W. Ideal for applications requiring small outline surface mount diodes in high temperature environments.