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SBC847CDW1T1G
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ManufacturerOnsemi
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Manufacturer's Part NumberSBC847CDW1T1G
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DescriptionNPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .1 A;
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Datasheet
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DetailsSBC847CDW1T1G Technical Details
TYPE | DESCRIPTION |
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Nominal Transition Frequency (fT): | 100 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPARATE, 2 ELEMENTS |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | .38 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 420 |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 45 V |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | 260 |