Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,014	Request Pricing	-

MMBD355LT1

Manufacturer

Onsemi
Manufacturer's Part Number

MMBD355LT1
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

2014 In Stock

Popular Products

1N4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

Details

1N4148W-T

Micro Commercial Components

1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.

Details

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

Details

BAV99

Transys Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

261

Mercury Systems

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

Details

SS14

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDV303N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;

Details

C0603C104K5RACAUTO

KEMET Corporation

KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.

Details

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;

Details

BAV99

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Won-top Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Vishay Intertechnology

Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.

Details

2N2222A

Texas Instruments

2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Eic Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

AB26TRB-32.768KHZ--T

Abracon

AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.

Details

1554216002

Molex

WIRE AND CABLE;

Details

MMBD355LT1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Config:	COMMON ANODE, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
JEDEC-95 Code:	TO-236AB
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
Diode Element Material:	SILICON
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	DUAL
Maximum Diode Capacitance:	1 pF
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	2
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.225 W
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	235
Moisture Sensitivity Level (MSL):	1

Category Top Products

HSMS-282B-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA792T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HMPS-2822-BLK

Broadcom

HMPS-2822-BLK by Broadcom is a Microwave Mixer & Detector Diode with 2 elements, operating in C Band. It features Schottky technology, max forward voltage of 0.34V, and diode element material made of silicon. Ideal for applications requiring high frequency mixing and detection capabilities.

BAT14-113P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-124ES

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-2810-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-095R

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel; Maximum Forward Voltage (VF): .44 V;

MMBD301LT1

Onsemi

MMBD301LT1 by Onsemi is a single Schottky mixer diode with a max power dissipation of 0.2W and a diode capacitance of 1.5pF. It operates in the very high frequency to ultra high frequency band, making it suitable for microwave applications requiring small outline packages and surface mount capabilities.

BA484AMO

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

TMMBAT29

STMicroelectronics

TMMBAT29 by STMicroelectronics is a Schottky mixer diode with ultra-high frequency band, 1 pF diode capacitance, and 7 dB max noise figure. It is used in microwave applications for signal mixing and detection due to its low forward voltage of 0.55 V and high output current of 30 A.

HSMS-2850-TR2G

Broadcom

Broadcom's HSMS-2850-TR2G is a Schottky mixer diode with zero barrier technology. Operating from 0.915 GHz to 4 GHz, it comes in a small outline package suitable for L band applications. The diode has a max temperature of 150°C and features gull wing terminals for surface mounting.

PMBD352212

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SMMBD301LT1G

Onsemi

The Onsemi SMMBD301LT1G is a single Schottky mixer diode with ultra-high frequency capabilities. It features a max diode capacitance of 1.5 pF and operates in a temperature range from -55 to 125 °C. Ideal for microwave applications, this surface-mount diode has a small outline package style and tin terminal finish.

934056928115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMDL101T1

Onsemi

MMDL101T1 by Onsemi is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.6V and max repetitive peak reverse voltage of 7V. This small outline diode is ideal for applications requiring high-frequency signal mixing and detection.

HSMS-2815-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

934056580115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

933613620143

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT62-03WE6327

Infineon Technologies

Infineon's BAT62-03WE6327 is a Schottky mixer diode with low barrier type. It has a max forward voltage of 1V and can handle up to 40V repetitive peak reverse voltage. Ideal for microwave applications due to its small outline package style and high operating temperature of 150°C.

HSMS-2828-BLKG

Broadcom

HSMS-2828-BLKG by Broadcom is a Schottky mixer diode with 4 elements in a bridge configuration. Operating from -65 to 150°C, it has a forward voltage of 0.34V and reverse current of 0.1uA. Ideal for C band applications, this diode features a small outline package with nickel palladium gold finish for surface mount assembly.