Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
736	$0.071	$52.440

MBRS260T3G

Manufacturer

Onsemi
Manufacturer's Part Number

MBRS260T3G
Description

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

736 In Stock

Popular Products

2N7002

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

Details

INA826AIDGKR

Texas Instruments

INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.

Details

LL4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SMBJ18CA

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

Details

LAN8720AI-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

261

New England Microwave

Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;

Details

LL4148

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BAV99

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358D-T

NXP Semiconductors

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

Details

BAV99

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

EEAGA1H4R7

Panasonic

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

Details

LL4148

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDV303N

Onsemi

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

Details

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM358MX

Texas Instruments

LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.

Details

BSS138

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

Details

2N2222A

Texas Instruments

2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).

Details

MBRS260T3G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Forward Voltage (VF):	.475 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	2 A
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-C2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	MBRS260T3GOS MBRS260T3GOSDKR 2156-MBRS260T3G-OS MBRS260T3GOSCT ONSONSMBRS260T3G MBRS260T3GOSTR MBRS260T3GOS-ND
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	60 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Non Repetitive Peak Forward Current:	60 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Additional Features:	FREE WHEELING DIODE
Peak Reflow Temperature (C):	260
Application:	POWER

Category Top Products

LMBR0530T1G

Leshan Radio

LMBR0530T1G by Leshan Radio is a Schottky rectifier diode with max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for surface mount applications in electronics requiring high-speed switching capabilities.

MBR0520L

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4007

Sep Electronic

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1.1 V; Config: SINGLE; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 1000 V;

1N4007

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N4007

Allied Electronic & Semiconductor Technology

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 1000 V; Maximum Forward Voltage (VF): 1.1 V; Maximum Output Current: 1 A;

MBRS540T3G

Onsemi

The Onsemi MBRS540T3G is a Schottky rectifier diode with a max output current of 5A and forward voltage of 0.5V. It operates in temperatures ranging from -65 to 150°C, making it suitable for power applications. With a reverse test voltage of 40V, it is ideal for use in electronic circuits requiring high efficiency and low power loss.