Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,546	Request Pricing	-

934056490115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934056490115
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

3546 In Stock

Popular Products

M24308/2-1F

Bel Fuse

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

Details

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

Details

M85049/85-08W02

TE Connectivity

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;

Details

LM358N

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148WS

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;

Details

DP83848IVVX/NOPB

National Semiconductor

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;

Details

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Rugao Dachang Electronic

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

Details

1N4148

Forward International Electronics

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;

Details

GRM155R71H103KA88D

Murata Manufacturing

The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.

Details

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LL4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

BSS138-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

Details

LM358M

Texas Instruments

LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.

Details

1N4148WS

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

934056490115 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	COMMON CATHODE, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
Surface Mount:	YES
Terminal Finish:	PURE TIN
Diode Element Material:	SILICON
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Moisture Sensitivity Level (MSL):	1

Category Top Products

MMSD301T1G

Onsemi

MMSD301T1G by Onsemi is a single microwave mixer & detector diode with very high to ultra high frequency range. It has a max diode capacitance of 1.5 pF and operates b/w -55°C to 125°C. Ideal for efficiency applications, it features a Schottky technology with a max forward voltage of 0.6V and peak output current of 0.2A.

BAT15-04R

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MA4E2037

TE Connectivity

TE Connectivity's MA4E2037 is a SINGLE microwave mixer diode with 0.06 pF capacitance. It features SCHOTTKY technology and GALLIUM ARSENIDE material, suitable for surface mount applications in microwave systems.

HSMS-2812-BLK

Hewlett Packard

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MA4E2037

Tyco Electronics M/a-com

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR11-AZ1

STMicroelectronics

STMicroelectronics' BAR11-AZ1 is a single-config microwave mixer diode with Schottky technology. Operating from -65 °C to 200°C, it has a max capacitance of 1.2 pF and covers very high to ultra high frequencies. The glass-packaged diode is ideal for applications requiring isolated case connection in round package shapes.

BA89202VH6127XTSA1

Infineon Technologies

Infineon's BA89202VH6127XTSA1 is a single microwave mixer diode with very high frequency band. It features a max diode capacitance of 1.4 pF and operates in temperatures ranging from -55°C to 125°C. Ideal for applications requiring small outline surface mount diodes, such as automotive radar systems.

BAT14-095R

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel; Maximum Forward Voltage (VF): .44 V;

BA423L-T

NXP Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT63-02V

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-104S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 6 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

HSMS-2852#T30

Hewlett Packard

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

933463300113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT45-AZX

STMicroelectronics

BAT45-AZX by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current, suitable for ultra high frequency applications. With a max forward voltage of 1 V and noise figure of 7 dB, it operates at temperatures up to 125 °C in an isolated round glass package.

1PS79SB63,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BA682

Temic Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT2402LSE6327XTSA1

Infineon Technologies

Infineon's BAT2402LSE6327XTSA1 is a single-config microwave mixer diode with Schottky technology. Operating in K band, it has low barrier Schottky element made of silicon. With a max power dissipation of 0.1W and forward voltage of 0.41V, it is ideal for high-frequency applications requiring low capacitance and reverse current.

BAT14-063S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Noise Figure: 6.5 dB;

SMS7630-040LF

Skyworks Solutions

Skyworks Solutions SMS7630-040LF is a single X Band microwave mixer diode with Schottky technology. It operates at a max temperature of 175°C, has a forward voltage of 0.12V, and can handle up to 0.05A output current. Ideal for applications requiring high-frequency mixing and detection in compact chip carrier packages.

HSMS-2852-TR2G

Broadcom

HSMS-2852-TR2G by Broadcom is a Schottky mixer diode with zero barrier Schottky technology. It operates from 0.915 GHz to 4 GHz in L band frequency range. This series-connected, center tap diode with 2 elements is ideal for microwave applications requiring high performance and reliability.