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BC817-25W,115

Manufacturer

Nexperia
Manufacturer's Part Number

BC817-25W,115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
Datasheet

Datasheet

4168 In Stock

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

Details

FDC5614P

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;

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MBRS1100T3G

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Details

BC817-25W,115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	1727-4841-6 2166-BC817-25W,115-1727 5202-BC817-25W,115TR 1727-4841-2 934021930115 BC817-25W T/R-ND 1727-4841-1 568-6052-1-ND 568-6052-6-ND 568-6052-2-ND 568-6052-1 568-6052-2 BC817-25W,115-ND 568-6052-6 BC817-25W T/R BC817-25W115
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	160
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	45 V
Maximum Collector-Base Capacitance:	5 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.7 V

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SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.

2N2905A

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MMBT4401LT1G by Onsemi is a NPN BJT transistor for switching applications. With a VCEsat of 0.75V, hFE of 40, and IC of 0.6A, it operates at temperatures from -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Bulk

BC817-25W,115

4168 In Stock

Popular Products

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BC817-25W,115 Technical Details

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