TIP122 by New Jersey Semiconductor Products

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Bulk

QTY	Unit Price	Ext Price
10,550	$0.157	$1,653.712

TIP122

Manufacturer

New Jersey Semiconductor Products
Manufacturer's Part Number

TIP122
Description

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Minimum DC Current Gain (hFE): 1000;
Datasheet

Datasheet

10550 In Stock

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RC0805FR-0710KL

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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FDN5618P

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FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

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CRG0805F10K

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TIP122 Technical Details

TYPE	DESCRIPTION
Maximum Collector Current (IC):	5 A
Maximum Collector-Emitter Voltage:	100 V
Configuration:	SINGLE
Transistor Element Material:	SILICON
No. of Elements:	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	1000

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D44H11G by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its high power dissipation of 50W and low min DC current gain (hFE) of 40.

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TIP122 Technical Details

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