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2N3055

Manufacturer

New England Semiconductor
Manufacturer's Part Number

2N3055
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
Datasheet

Datasheet

Not In Stock

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2N3055 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	2.5 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	15 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	2
Maximum Power Dissipation (Abs):	115 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	200 Cel
Maximum Power Dissipation Ambient:	115 W
JEDEC-95 Code:	TO-204AA
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	20
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Maximum VCEsat:	1.1 V

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