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2N2219A

Manufacturer

New England Semiconductor
Manufacturer's Part Number

2N2219A
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
Datasheet

Datasheet

Not In Stock

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2N2219A Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	300 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.8 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.8 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	200 Cel
JEDEC-95 Code:	TO-205AD
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	30
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Maximum Collector-Base Capacitance:	8 pF
Maximum VCEsat:	.3 V

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