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MMBT3906

Manufacturer

National Semiconductor
Manufacturer's Part Number

MMBT3906
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
Datasheet

Datasheet

7209 In Stock

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MMBT3906 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	70 ns
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	300 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.35 W
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	30
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	40 V
Additional Features:	HIGH SPEED SATURATED SWITCHING
Maximum Collector-Base Capacitance:	4.5 pF
Maximum VCEsat:	.4 V

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;

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MMBT3904TT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance in small outline packages.

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