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TIP112
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ManufacturerMotorola
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Manufacturer's Part NumberTIP112
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
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Datasheet
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DetailsTIP112 Technical Details
TYPE | DESCRIPTION |
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Nominal Transition Frequency (fT): | 25 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 2 A |
Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | Tin/Lead (Sn/Pb) |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 50 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Power Dissipation Ambient: | 50 W |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 500 |
JESD-609 Code: | e0 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 100 V |
Additional Features: | LEADFORM OPTIONS ARE AVAILABLE |
Maximum Collector-Base Capacitance: | 100 pF |
Maximum VCEsat: | 2.5 V |