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TIP110

Manufacturer

Microsemi
Manufacturer's Part Number

TIP110
Description

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
Datasheet

Datasheet

6887 In Stock

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2N2222A

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TIP110 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-220
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1000
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

ULN2803A

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BCP56-16

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

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NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Additional Features: LOGIC LEVEL COMPATIBLE;

2SC5200

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2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.

2N3055

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5; Package Body Material: METAL;

TIP117

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PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

TIP42C

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

TIP3055G

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TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.

TIP147

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PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 10 A; No. of Terminals: 3;

BD138

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 60 V;

TIP142

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

TIP42A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;

MJD127T4

STMicroelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; No. of Terminals: 2;

TIP41-C

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Secos TIP41-C is a NPN BJT transistor with max VCEsat of 1.5V, ideal for switching applications. It has a max power dissipation of 65W and max collector current of 6A. With a min hFE of 15, it operates up to 150°C, making it suitable for high-power electronic circuits.

JANTX2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

TIP122

Kec

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

NJVMJD32CT4G

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NJVMJD32CT4G by Onsemi is a PNP BJT with 100V VCEO, 3A IC, and 15W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and -65 to 150°C operating range. Suitable for surface mount designs with Gull Wing terminals in a small outline package.