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NAND128W3A2BN6E
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ManufacturerMicron Technology
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Manufacturer's Part NumberNAND128W3A2BN6E
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DescriptionFLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;
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Datasheet
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DetailsNAND128W3A2BN6E Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Programming Voltage (V): | 3 |
Minimum Supply Voltage (Vsup): | 2.7 V |
Sub-Category: | Flash Memories |
Surface Mount: | YES |
Technology: | CMOS |
No. of Sectors/Size: | 1K |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ASYNCHRONOUS |
Package Code: | TSSOP |
Moisture Sensitivity Level (MSL): | 3 |
Toggle Bit: | NO |
Memory Width: | 8 |
Qualification: | Not Qualified |
Package Equivalence Code: | TSSOP48,.8,20 |
Ready or Busy: | YES |
Peak Reflow Temperature (C): | 260 |
Terminal Pitch: | .5 mm |
Maximum Standby Current: | .00005 Amp |
Organization: | 16MX8 |
Maximum Seated Height: | 1.2 mm |
Maximum Supply Current: | 20 mA |
Command User Interface: | YES |
Terminal Finish: | Nickel/Palladium/Gold (Ni/Pd/Au) |
No. of Terminals: | 48 |
No. of Words: | 16777216 words |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
JESD-30 Code: | R-PDSO-G48 |
Maximum Operating Temperature: | 85 Cel |
Width: | 12 mm |
Memory Density: | 134217728 bit |
Sector Size (Words): | 16K |
Memory IC Type: | FLASH |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -40 Cel |
Page Size (words): | 512 |
No. of Functions: | 1 |
Type: | SLC NAND TYPE |
Length: | 18.4 mm |
Maximum Access Time: | 35 ns |
No. of Words Code: | 16M |
Nominal Supply Voltage / Vsup (V): | 3 |
Parallel or Serial: | PARALLEL |
Temperature Grade: | INDUSTRIAL |
Maximum Supply Voltage (Vsup): | 3.6 V |
Data Polling: | NO |
Power Supplies (V): | 3/3.3 |