MT40A256M16GE-083E:BTR by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
548	Request Pricing	-

MT40A256M16GE-083E:BTR

Manufacturer

Micron Technology
Manufacturer's Part Number

MT40A256M16GE-083E:BTR
Description

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; No. of Words Code: 256M;
Datasheet

Datasheet

548 In Stock

Popular Products

LM2931Z-5.0RPG

Onsemi

LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.

Details

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

Details

FT232RL-TUBE

FTDI

FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.

Details

LM358DT

ROHM

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

SS14

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

RC0603FR-071KL

Yageo

Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.

Details

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

Details

LM555CM

Renesas Electronics

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

SS14

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58-360

Glenair

CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;

Details

LM7805CT

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

CRCW080510R0FKEA

Vishay Intertechnology

Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.

Details

LM317T

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

Details

BAV99

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Rectron

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

CRG0805F10K

TE Connectivity

TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.

Details

MT40A256M16GE-083E:BTR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.022 Amp
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
Maximum Supply Current:	289 mA
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	1200 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	95 Cel
Package Code:	TFBGA
Width:	9 mm
Other Names:	MT40A256M16GE-083E:BTR
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	8
Memory IC Type:	DDR4 DRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	8
Length:	14 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.2
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.26 V

Category Top Products

M378T5663QZ3-CF7

Samsung

Samsung M378T5663QZ3-CF7 is a 256MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory width of 64 bits. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

K4S281632K-UC60

Samsung

Samsung's K4S281632K-UC60 is a 8MX16 DRAM with 200 MHz clock frequency. It operates synchronously at 3.3V, featuring 70°C max temp. Ideal for applications requiring high-speed memory access and low power consumption.

MTA4ATF1G64HZ-3G2E1

Micron Technology

Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.

MT48LC32M16A2TG-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.

IS43LR16800G-6BLI-TR

Integrated Silicon Solution

IS43LR16800G-6BLI-TR by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with a memory density of 134217728 bits. It operates synchronously at a max temperature of 85°C and has a self-refresh mode. This thin-profile, fine-pitch package is ideal for industrial applications requiring fast access times and low power consumption.

MSM5416273-50GS-K

Lapis Semiconductor

MSM5416273-50GS-K by Lapis Semiconductor is a 256Kx16 DRAM with synchronous operation at 5V. It features fast page access mode, 50ns max access time, and video DRAM memory IC type. Ideal for applications requiring high-speed data storage in commercial temperature environments.

IS42S16400J-6TLI-TR

Integrated Silicon Solution

IS42S16400J-6TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers a memory density of 67108864 bits and supports four bank page burst access mode. Ideal for industrial applications requiring fast data processing in compact systems.

MT40A256M16GE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.

MT48LC8M16A2P-7ELTR

Micron Technology

Micron Technology's MT48LC8M16A2P-7ELTR is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 0-70 °C. It features Self Refresh and Four Bank Page Burst access mode, suitable for commercial applications requiring high memory density and fast access times.

MT48LC16M16A2B4-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:G is a 16MX16 DRAM with 3.3V supply, 143 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high-speed memory with common I/O type and self-refresh capability in a compact grid array package.

AS4C1G8MD3L-12BCN

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.

MT46V16M16P-5BIT

Micron Technology

Micron Technology's MT46V16M16P-5BIT is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features a small outline package, common I/O type, and self-refresh mode. Ideal for industrial applications requiring high memory density and fast access times.

K4B2G0846C-HCH9

Samsung

Samsung's K4B2G0846C-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.

MT53E512M32D1ZW-046IT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

K4S641632K-UC75

Samsung

Samsung's K4S641632K-UC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. Package style: small outline, thin profile, suitable for commercial temperature grade environments.

M374S1723FTS-C7A

Samsung

Samsung M374S1723FTS-C7A is a 16MX72 Synchronous DRAM Module with 133 MHz fCLK. It operates at 3.3V, has 72 memory width, and supports FOUR BANK PAGE BURST access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.

S27KL0642DPBHA020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE; Surface Mount: YES;

S70KL1282DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;

MT46H32M16LFBF-6AAT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AAT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. It operates at 166 MHz, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.