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SST26VF032BT-104I/SM70SVAO

Manufacturer

Microchip Technology
Manufacturer's Part Number

SST26VF032BT-104I/SM70SVAO
Description

EEPROM;
Datasheet

Datasheet

Not In Stock

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SST26VF032BT-104I/SM70SVAO Technical Details

TYPE	DESCRIPTION
Memory IC Type:	EEPROM

Category Top Products

SST26VF032BA-104I/SM

Microchip Technology

SST26VF032BA-104I/SM by Microchip Technology is a 32Mb NOR type flash memory with a max clock frequency of 104MHz. It operates at a nominal voltage of 3V and has a small outline package style. This memory IC is commonly used in industrial applications requiring high endurance and reliable data storage.

AT45DB161E-SSHD2B-T

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MT25QU256ABA8E12-1SIT/TR

Micron Technology

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M29W160EB70N6E

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S29GL128P90FFIR10

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S29JL032J70TFI020

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Infineon's S29JL032J70TFI020 is a 32Mb NOR Flash Memory with 2Mx16 organization, operating at 3V. It features synchronous mode, industrial temperature grade, and parallel interface. Ideal for applications requiring fast access time, such as embedded systems and automotive electronics.

M25P40-VMN6PB

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Micron Technology's M25P40-VMN6PB is a NOR type Flash Memory with 512Kx8 organization, operating at 50 MHz. It has a supply voltage range of 2.3V to 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring reliable serial SPI communication and small outline package style.

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SST39VF1681-70-4C-EKE by Microchip: NOR flash memory, 2Mx8 organization, 512 sectors of 4K words each. Ideal for commercial applications requiring fast access time (70ns) and endurance of 100k write/erase cycles. Operates at 3V with low standby current (0.00002A) and supports asynchronous mode.

AT25DF081A-SSH-B

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FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

MT29F2G08ABAEAWP-IT:E

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Micron Technology's MT29F2G08ABAEAWP-IT:E is a 256MX8 SLC NAND Flash Memory with 2K sectors and 100,000 Write/Erase cycles. Operating at 3.3V, it offers industrial-grade reliability for applications requiring high endurance and fast data access. With a compact form factor of 18.4mm x 12mm and low standby current of 0.0001A, it is ideal for embedded systems in harsh environments.

MTFC4GACAJCN-1MWT

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MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

M25P64-VME6TG

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Memory Density: 67108864 bit;

M25P64-VMF6P

STMicroelectronics

STMicroelectronics M25P64-VMF6P is a 64Mb NOR Flash Memory with 8MX8 organization, SPI serial bus type, and 50 MHz clock frequency. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

MT25QU02GCBB8E12-0SIT

Micron Technology

MT25QU02GCBB8E12-0SIT by Micron Technology is a 2Gx1 Flash Memory IC with 166MHz clock frequency, operating at 1.8V. It is used in industrial applications for its 2147483648-bit memory density and serial interface, suitable for temperatures ranging from -40 to 85°C.

S25FL256SAGBHI200

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FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

S29AL008J70TFI020

Infineon Technologies

S29AL008J70TFI020 by Infineon Technologies is a 512Kx16 NOR type Flash Memory with 3V nominal voltage. It features 1000000 write/erase cycles, operates in industrial temperature grade, and has a max access time of 70ns. Ideal for applications requiring high endurance and fast data access in harsh environments.

SST39SF010A-55-4I-NHE-T

Microchip Technology

SST39SF010A-55-4I-NHE-T by Microchip: 128KX8 NOR Flash Memory with 3-STATE output, operates at -40 to 85°C. Ideal for industrial applications, offering 100000 Write/Erase Cycles and fast access time of 55 ns. Supports asynchronous operation and has a memory density of 1048576 bit.