BAT6804WE6327HTSA1 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BAT6804WE6327HTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT6804WE6327HTSA1
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

1N4148

Toshiba

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138LT3G

Onsemi

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.

Details

1N4148

Texas Instruments

1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.

Details

ERJ3EKF1002V

Panasonic

Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.

Details

BAV99

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

Details

LM2931AZ-5.0RAG

Onsemi

LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.

Details

1N4148

Frontier Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

Details

1N4148

Philips Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Adi Electronics

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;

Details

2N7002

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;

Details

1N4148

Invensys Sensor Systems

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

KSZ9031RNXIA

Micrel

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;

Details

LL4148

Panjit International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SMBJ18CA

First Components International

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

BAV99

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAT6804WE6327HTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	3
Terminal Position:	DUAL
Maximum Diode Capacitance:	1 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
No. of Elements:	2
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.15 W
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel

Category Top Products

BAT14-113S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

HSMS-2812-BLK

Broadcom

Broadcom's HSMS-2812-BLK is a Schottky mixer diode with 20V reverse voltage, 0.41V forward voltage, and operates up to 150°C. Ideal for microwave applications due to its small outline package and dual terminal position for surface mounting.

BAT15-074H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BA481153

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT15-074S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5.5 dB; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON;

TGD0683SSMX

Texas Instruments

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

STDD15-05W

STMicroelectronics

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD501

Onsemi

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1502LRHE6327XTSA1

Infineon Technologies

BAT1502LRHE6327XTSA1 by Infineon Technologies is a Schottky mixer diode with 0.35 pF capacitance, suitable for X Band applications. It operates at 150°C max temperature, has a power dissipation of 0.1 W, and features a low barrier Schottky element in a chip carrier package.

HSMS-282K-BLK

Broadcom

HSMS-282K-BLK by Broadcom is a Schottky mixer diode with a max forward voltage of 0.7V and a reverse test voltage of 1V. It operates in temperatures ranging from -65°C to 150°C, making it suitable for microwave applications requiring high-performance diodes in small outline packages.

1PS70SB85T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2812

Broadcom

Broadcom's HSMS-2812 is a Schottky mixer diode with 1.2 pF capacitance, 0.41 V forward voltage, and 20 V peak reverse voltage. It features a series-connected, dual-terminal design in a small outline package for microwave applications. The diode operates at up to 150°C and can handle 0.25 W pulsed input power.

BAT15-05W

Infineon Technologies

BAT15-05W by Infineon Technologies is a Schottky mixer diode with low barrier Schottky technology, operating at up to 12 GHz. It features a common cathode configuration, small outline package style, and dual terminal position. Ideal for X band applications requiring high frequency operation and low diode capacitance of 0.35 pF.

BAT15-014

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-282K-TR1

Broadcom

Broadcom's HSMS-282K-TR1 is a Schottky mixer diode with 2 elements, operating b/w -65 to 150 °C. It has a max VF of 0.7 V and reverse voltage of 15 V, suitable for microwave applications due to its small outline package and low reverse current of 0.1 uA.

BAT14-093S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 6.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

NSR15SDW1T4G

Onsemi

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

BA892H6127XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD354LT1G

Onsemi

MMBD354LT1G by Onsemi is a common cathode diode with 2 elements, operating in the ultra high frequency band. With a max power dissipation of 0.225W and diode capacitance of 1pF, it is ideal for microwave mixer applications. This surface mount diode has a temperature range from -55°C to 150°C, making it suitable for various electronic devices.

BAT1502ELE6327XTMA1

Infineon Technologies

BAT1502ELE6327XTMA1 by Infineon is a single Schottky mixer diode with 0.24 pF capacitance, ideal for X Band applications. With a low barrier Schottky element and 0.41 V forward voltage, it operates b/w -55 to 150 °C. This chip carrier package has gold finish terminals and can handle up to 0.1 W power dissipation.