Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
803	Request Pricing	-

BAT15-123S

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT15-123S
Description

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Noise Figure: 9 dB; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

803 In Stock

Popular Products

SMBJ18CA

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

Details

LM555CN

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

1N4148

Baneasa S A

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

Details

ULN2803A

Motorola

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;

Details

1N4148WS

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Renesas Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

AT90CAN128-16AUR

Microchip Technology

AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.

Details

M39029/58-360

Tri-star Electronics International

CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;

Details

BAV99

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;

Details

2N7002

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

Details

BAV99

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Panjit International

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

National Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ISO1050DUBR

Texas Instruments

ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.

Details

1N4148

Grande Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

B340A-13-F

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAT15-123S Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Noise Figure:	9 dB
Maximum Operating Temperature:	150 Cel
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

1PS70SB84,115

NXP Semiconductors

1PS70SB84,115 by NXP Semiconductors is a microwave mixer diode with Schottky technology. It operates in the ultra-high frequency band and has a max forward voltage of 0.7V. This series-connected diode with two elements is ideal for applications requiring high-frequency signal mixing and detection.

BAT19-ARX

STMicroelectronics

STMicroelectronics BAT19-ARX is a single-config microwave mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1 V and can handle up to 30 A output current at 125 °C operating temperature.

BA483AMO

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2815-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-052R

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

TMM6263

STMicroelectronics

TMM6263 by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max repetitive peak reverse voltage of 60V. This glass-packaged diode is suitable for applications requiring high-frequency signal mixing and detection.

934054935115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2852-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-280C-BLKG

Broadcom

HSMS-280C-BLKG by Broadcom is a Schottky mixer diode with 2 elements, max forward voltage of 0.41V, and a repetitive peak reverse voltage of 70V. It is designed for microwave applications, featuring a small outline package shape and series connected configuration for high performance in RF circuits. The diode's surface mount capability and dual terminal position make it suitable for compact electronic devices requiring efficient signal processing.

BAT14-044ES

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MMSD301T1G

Onsemi

MMSD301T1G by Onsemi is a single microwave mixer & detector diode with very high to ultra high frequency range. It has a max diode capacitance of 1.5 pF and operates b/w -55°C to 125°C. Ideal for efficiency applications, it features a Schottky technology with a max forward voltage of 0.6V and peak output current of 0.2A.

BAT6302VH6327XTSA1

Infineon Technologies

BAT6302VH6327XTSA1 by Infineon Technologies is a Schottky mixer diode with 0.85 pF capacitance, suitable for microwave applications. It features a low barrier Schottky element in a small outline package, rated for 150°C operating temperature. This single-config diode has matte tin finish and can dissipate up to 0.1 W power.

BAT68-06E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-104H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BA683-T

NXP Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

934056580115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT63E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-123ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

STDD15-05WFILM

STMicroelectronics

STDD15-05WFILM by STMicroelectronics is a dual-element mixer diode designed for microwave applications. It features a max capacitance of 1 pF, operates up to 150 °C, and comes in a compact surface mount package. Ideal for high-frequency signal processing tasks.

HSMS-2822-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;