Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BAT15-013S

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT15-013S
Description

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Noise Figure: 5.5 dB;
Datasheet

Datasheet

Not In Stock

Popular Products

OPA2277UA

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LM358MX

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LM358MX

ROHM

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

Details

LL4148

Taitron Components

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

M39029/56-351

Carlisle Interconnect Technologies

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;

Details

2N7002

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

Details

BSS123NH6327XTSA1

Infineon Technologies

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.

Details

STM32H753BIT6

STMicroelectronics

STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.

Details

USB3320C-EZK-TR

Microchip Technology

Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

Details

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

Details

LM107H/883

Texas Instruments

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

Details

SMBJ18CA

Yangzhou Yangjie Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

LM358M

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

BAV99

Jiangsu Changjiang Electronics Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;

Details

4554

Jw Miller Magnetics

Other Semiconductors;

Details

2N7002-7-F

Diodes Incorporated

Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.

Details

LM358N

Harris Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

AT90CAN128-16AU

Atmel

MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM358M

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

BAT15-013S Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Noise Figure:	5.5 dB
Maximum Operating Temperature:	150 Cel
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

BAT14-095S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum Forward Voltage (VF): .44 V;

DB2X20100L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-099LRH-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Schottky Barrier Type: LOW BARRIER; No. of Elements: 2;

934055230135

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD353

Onsemi

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS76SB17135

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSCH-5330

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MDX655

Texas Instruments

MIXER DIODE; Surface Mount: YES; Maximum Impedance: 200 ohm; Diode Element Material: GALLIUM ARSENIDE; Maximum Operating Frequency: 40 GHz; Maximum Operating Temperature: 100 Cel;

BA481153

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2822-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR28-B2

STMicroelectronics

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-282K-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

NSR15SDW1T4

Onsemi

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-285L-TR1G

Broadcom

HSMS-285L-TR1G by Broadcom is a Schottky mixer diode with 3 elements, operating in L Band frequency. It features a max forward voltage of 0.25V and can withstand temperatures from -65°C to 150°C. This diode is ideal for microwave applications requiring high-speed signal mixing and detection in small outline packages.

HSMS-2812-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT68-04E6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

934045400115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

DB5S310K0R

Panasonic

The Panasonic DB5S310K0R is a microwave mixer & detector diode with 2 elements, suitable for very high frequency applications. It has a max reverse current of 200 uA and operates b/w -40 to 85 °C. This small outline diode features a plastic/epoxy package body, surface mount capability, and a rectangular shape.

SBL-803

Onsemi

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 100 GHz; Minimum Operating Frequency: 11 GHz; Diode Element Material: GALLIUM ARSENIDE;

BAT15-098LRHE6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Minimum Breakdown Voltage: 4 V; Maximum Operating Temperature: 150 Cel; Maximum Diode Capacitance: .35 pF; Technology: SCHOTTKY;