Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
102	Request Pricing	-

BAT14-114S

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-114S
Description

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 7.5 dB;
Datasheet

Datasheet

102 In Stock

Popular Products

LM7805CT

Fairchild Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

1N4148

Rochester Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

M39029/56-351

Defense Logistics Agency

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;

Details

LM555CM

Texas Instruments

LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.

Details

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

DS18B20Z/T&R

Maxim Integrated

DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.

Details

SS14

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

Details

2N7002

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

Details

BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

1N4148

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

FDV303N

Onsemi

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

Details

1N4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;

Details

BAV99

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317LMX/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;

Details

2N2222A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

Details

1N4148

Diotec Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAT14-114S Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Noise Figure:	7.5 dB
Maximum Operating Temperature:	150 Cel
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

MMBD301LT3G

Onsemi

MMBD301LT3G by Onsemi is a single Schottky mixer diode with ultra high frequency band. It has a max forward voltage of 0.45V and can operate in temperatures ranging from -55 to 125°C. Ideal for microwave applications, this diode comes in a small outline package with matte tin finish for surface mount assembly.

BAT14-074

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-020D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

HSMS-282K-TR2G

Broadcom

HSMS-282K-TR2G by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.34V and reverse current of 0.1uA. Ideal for microwave applications, it offers high performance in a small outline package with matte tin finish.

934056488115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SPD121P

Onsemi

SPD121P by Onsemi is a surface mount microwave mixer diode with GaAs element. It operates from 3.9 GHz to 11 GHz, with max temp of 150 °C. Ideal for RF applications requiring high frequency mixing and detection.

BAT68-03WE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

5082-2835

Hewlett Packard

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2810-TR1G

Broadcom

HSMS-2810-TR1G by Broadcom is a Schottky mixer diode with 2 pF capacitance, 0.41 V forward voltage, and 20 V reverse voltage. It is a single-config microwave diode in a small outline package for high-temp applications up to 150°C. Ideal for surface-mount designs requiring fast switching and low noise levels.

MMBD301LT1

Leshan Radio

MIXER DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 125 Cel;

MMBD352LT1G

Onsemi

MMBD352LT1G by Onsemi is a series connected, ultra high frequency microwave mixer diode with 2 elements. It has a max diode capacitance of 1 pF and operates in temperatures ranging from -55 to 150 °C. This small outline diode is ideal for applications requiring high frequency mixing and detection.

BAT14-077S

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: BALL; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-286C-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT45-AZ2

STMicroelectronics

BAT45-AZ2 by STMicroelectronics is a single mixer diode with ultra high frequency band. It features 1.1 pF diode capacitance, 0.1 uA reverse current, and 7 dB noise figure. Ideal for microwave applications due to its Schottky technology and max operating temperature of 125 °C.

934055230135

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR11-AR2

STMicroelectronics

STMicroelectronics' BAR11-AR2 is a single Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C in very high to ultra high frequency bands. Its glass package and isolated case connection make it suitable for microwave applications.

SBL-122

Onsemi

SBL-122 by Onsemi is a surface mount mixer diode with GaAs element. It operates from 3.9 GHz to 12 GHz, ideal for microwave applications. With a max temp of 150 °C, it's suitable for high-frequency circuits in various electronic devices.

BAT15-124

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

TMM6263

STMicroelectronics

TMM6263 by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max repetitive peak reverse voltage of 60V. This glass-packaged diode is suitable for applications requiring high-frequency signal mixing and detection.

BAT15099RE6327HTSA1

Infineon Technologies

Infineon's BAT15099RE6327HTSA1 is a Schottky mixer diode with 4 elements, suitable for X Band applications. It features low barrier Schottky technology, 0.5 pF diode capacitance, and operates b/w -55 to 150 °C. This small outline package has a max power dissipation of 0.1 W and tin terminal finish.