Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
102	Request Pricing	-

BAT14-114S

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-114S
Description

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 7.5 dB;
Datasheet

Datasheet

102 In Stock

Popular Products

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

Details

LM358MX

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

06035C104KAT2A

KYOCERA AVX

06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.

Details

MBR0530T1G

Onsemi

MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.

Details

LM358D-T

NXP Semiconductors

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

Details

LM555CM

Texas Instruments

LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.

Details

1N4148

Philips Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;

Details

BSS138

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

Details

1N4148

Vicor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WT-7

Diodes Incorporated

1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.

Details

SMBJ18CA

International Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM358N

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LL4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WT

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBRA340T3G

Onsemi

MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.

Details

BSS138DW-7-F

Diodes Incorporated

BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.

Details

LL4148

Micronas Semiconductor Holding Ag

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;

Details

CL10B104KB8NNNC

Samsung Electro-mechanics

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.

Details

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

Details

BAT14-114S Technical Details

TYPE	DESCRIPTION
Diode Element Material:	SILICON
Diode Type:	MIXER DIODE
Maximum Noise Figure:	7.5 dB
Maximum Operating Temperature:	150 Cel
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

STDD15-05WFILM

STMicroelectronics

STDD15-05WFILM by STMicroelectronics is a dual-element mixer diode designed for microwave applications. It features a max capacitance of 1 pF, operates up to 150 °C, and comes in a compact surface mount package. Ideal for high-frequency signal processing tasks.

HSMS-282C-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS70SB85,115

NXP Semiconductors

1PS70SB85,115 by NXP Semiconductors is a microwave mixer diode with common cathode configuration. It operates in the ultra-high frequency band and has a max forward voltage of 0.7V. This Schottky technology diode is ideal for applications requiring high-frequency signal mixing and detection in electronic circuits.

HSMS-285BBLKG

Agilent Technologies

Agilent Technologies' HSMS-285BBLKG is a Schottky mixer diode with zero barrier technology. Operating in L band, it features a single configuration and gull wing terminals for surface mount applications. The diode's small outline package makes it suitable for microwave mixing and detection tasks.

BAT15-033H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-064P

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT14-090S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .44 V; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -55 Cel;

933613620113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT14-094

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT14-074H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

TMMBAT19

STMicroelectronics

TMMBAT19 by STMicroelectronics is a single-config microwave mixer diode with ultra high frequency band. It features a max forward voltage of 1V, operating temperature range from -65 to 125 °C, and Schottky technology. Ideal for applications requiring high-speed signal mixing in isolated case connections.

BAT15-036

Infineon Technologies

MIXER DIODE; Surface Mount: NO; Diode Element Material: SILICON; Maximum Operating Frequency: 4 GHz; Minimum Operating Frequency: 2 GHz; Maximum Noise Figure: 5.5 dB;

HSMS-282K-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-113H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-034H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

DB3X314K0L

Panasonic

The Panasonic DB3X314K0L is a microwave mixer and detector diode with a Schottky technology. It operates in the L band frequency range and has a max forward voltage of 0.4V. This diode, with its small outline package style, is commonly used in applications such as microwave communication systems and radar equipment.

BAT15099E6433HTMA1

Infineon Technologies

BAT15099E6433HTMA1 by Infineon Technologies is a Schottky mixer diode with low barrier type, suitable for X band applications. Featuring separate configuration with 2 elements, it has a max power dissipation of 0.1W and operates at temperatures up to 150°C. This surface-mount diode in small outline package is ideal for microwave mixer and detector applications.

BAT17-04WH6327

Infineon Technologies

Infineon's BAT17-04WH6327 is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.6 V forward voltage. It operates in the very high to ultra high frequency band for applications like microwave mixers and detectors. The diode has a max power dissipation of 0.15 W and can handle temperatures from -55°C to 125°C.

BAT15-104ES

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-074P

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;