Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
256	Request Pricing	-

BAT14-099E6327

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT14-099E6327
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

256 In Stock

Popular Products

BAV99

ROHM

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Plessey Semiconductors Discrete Components Div

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Hy Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MMBF170LT1G

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

OPA2277UA/2K5

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LAN8720AI-CP-TR

Microchip Technology

LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BSS123LT1G

Onsemi

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

Details

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

Details

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

Details

LM317T

Texas Instruments

LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.

Details

LM107H/883C

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;

Details

FDN5618P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

Details

2N7002

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

Details

BAT14-099E6327 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SEPARATE, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	X BAND
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	4
Qualification:	Not Qualified
Terminal Position:	DUAL
Maximum Diode Capacitance:	.35 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
Schottky Barrier Type:	MEDIUM BARRIER
JESD-30 Code:	R-PDSO-G4
No. of Elements:	2
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.1 W
Terminal Form:	GULL WING
Case Connection:	CATHODE

Category Top Products

HSMS-285B-BLKG

Broadcom

HSMS-285B-BLKG by Broadcom is a Schottky mixer diode with a frequency range of 0.915 GHz to 4 GHz, ideal for L Band applications. It features a plastic/epoxy package, matte tin terminal finish, and operates at temperatures up to 150°C. Suitable for surface mount designs in microwave systems.

BAT14-064H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

DB2X20100L

Panasonic

The Panasonic DB2X20100L is a single ultra-high frequency mixer diode with a plastic/epoxy package. It operates b/w -40°C to 85°C, has 2 terminals, and is surface mountable. Ideal for applications requiring high-frequency mixing such as radar systems and communication equipment.

BA792,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-113H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HSMS-282B-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA482153

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

934055282115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

STDD15-04WFILM

STMicroelectronics

STDD15-04WFILM by STMicroelectronics is a high-performance microwave mixer diode designed for efficient signal processing. It features a max capacitance of 1 pF, operates up to 150 °C, and comes in a compact surface mount package. Ideal for RF applications, it ensures reliable performance in demanding environments.

HSMS-2810-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-285B-TR1G

Broadcom

HSMS-285B-TR1G by Broadcom is a Schottky mixer diode with a frequency range of 0.915 GHz to 4 GHz. It features a zero barrier Schottky element and operates at temperatures up to 150°C. This single-config diode in a small outline package is ideal for microwave applications in the L band.

MA4E2037

M/a-com Technology Solutions

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BA277-01

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-286K-BLKG

Broadcom

HSMS-286K-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.35V and can withstand temperatures from -65 to 150°C. Ideal for microwave applications requiring high frequency performance in a small outline package.

SMS7621-092

Skyworks Solutions

SMS7621-092 by Skyworks Solutions is a microwave mixer diode with Schottky technology. It operates in K band frequency range, has 2 elements, and a low barrier Schottky diode element material. Ideal for applications requiring common bipolar terminal configuration and surface mount package style, with a max power dissipation of 0.075W.

BA481153

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

CDC7630-000

Alpha Industries

MIXER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

1PS76SB17

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2800-BLKG

Broadcom

HSMS-2800-BLKG by Broadcom is a Schottky mixer diode with 2 pF capacitance and 70 V reverse voltage. It is a single-config, surface-mount device in a small outline package, ideal for microwave applications up to 150°C. The diode features a forward voltage of 0.41 V and terminal finish of NiPdAu.

MMBD301LT3

Onsemi

MMBD301LT3 by Onsemi is a single Schottky mixer diode with a max forward voltage of 0.45V and a max repetitive peak reverse voltage of 30V. It operates in the very high frequency to ultra high frequency band, making it suitable for microwave applications requiring small outline surface mount packages. With a max power dissipation of 0.2W and operating temperature up to 125 °C, it offers reliable performance in various electronic systems.