Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MB814400A-70PZ

Manufacturer

Fujitsu
Manufacturer's Part Number

MB814400A-70PZ
Description

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

Details

SMBJ18CA

Jgd Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

BAV99

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

RC0402JR-070RL

Yageo

Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.

Details

CL10B104KB8NNNC

Samsung Electro-mechanics

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.

Details

1N4148WS

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;

Details

LM358N

Samsung

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

BAV99

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358MX

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

1N4148WS

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

International Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM358N

Kec

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Mde Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CC0603KRX7R9BB103

Yageo

Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.

Details

M39029/58-360

Molex

CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;

Details

OPA2277UA

Texas Instruments

OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.

Details

MB814400A-70PZ Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.001 Amp
Organization:	1MX4
Output Characteristics:	3-STATE
Maximum Seated Height:	10.16 mm
Access Mode:	FAST PAGE
Minimum Supply Voltage (Vsup):	4.5 V
Sub-Category:	DRAMs
Surface Mount:	NO
Maximum Supply Current:	100 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	20
No. of Words:	1048576 words
Terminal Position:	ZIG-ZAG
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PZIP-T20
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	ZIP
Width:	2.85 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4194304 bit
Self Refresh:	NO
Memory IC Type:	FAST PAGE DRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	4
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	ZIP20,.1
Refresh Cycles:	1024
Length:	25.88 mm
Maximum Access Time:	70 ns
No. of Words Code:	1M
Nominal Supply Voltage / Vsup (V):	5
Additional Features:	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	5.5 V
Power Supplies (V):	5

Category Top Products

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.

KM41C4000BSLP-8

Samsung

Samsung's KM41C4000BSLP-8 is a 4MX1 DRAM with 4194304-bit memory density. It operates asynchronously at 5V, featuring a max access time of 80ns and refresh cycles of 1024. Ideal for applications requiring fast page access in commercial temperature grades.

MT48LC16M16A2P-75IT:D

Micron Technology

Micron Technology's MT48LC16M16A2P-75IT:D is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package for space-constrained designs.

MT48LC16M16A2P-6A:DTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6A:DTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features SYNCHRONOUS operation mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for commercial applications requiring fast data processing in compact systems.

MT41K256M8DA-125AIT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AIT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory with self-refresh capabilities.

AS4C256M16D3A-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.

AS4C512M16D3L-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

IS43TR16256B-125KBLI-TR

Integrated Silicon Solution

IS43TR16256B-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data access speeds.

AS4C16M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C16M16SA-6BIN is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Featuring self-refresh and common I/O type, it operates at 3.3V with a memory density of 268MB. Ideal for systems requiring fast access times and high memory capacity.

MT47H128M8SH-25E:M

Micron Technology

Micron Technology's MT47H128M8SH-25E:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features a common I/O type, self-refresh capability, and synchronous mode. Ideal for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.

W631GG6NB-12

Winbond Electronics

Winbond Electronics' W631GG6NB-12 is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz. It features a 96-terminal grid array package suitable for synchronous applications. With a low standby current of 0.04 Amp and common I/O type, it's ideal for high-speed memory requirements in various electronic devices.

KM44C1000BT-7

Samsung

Samsung's KM44C1000BT-7 is a 1MX4 DRAM with 70ns access time, operating at 5V. It features 3-STATE output and fast page access mode, suitable for commercial applications requiring high memory density and low standby current. The package is small outline with dual terminal position, making it ideal for space-constrained designs.

A43L2616BV-7UF

Amic Technology

A43L2616BV-7UF by Amic Technology is a 4MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type in a small outline package.

KVR16LS11S6/2

Kingston Technology Company

Kingston's KVR16LS11S6/2 DDR3L DRAM Module features 256MX64 organization, 1.35V nominal voltage, and operates synchronously. Ideal for applications requiring low power consumption and high memory density in microelectronic assemblies with a max operating temperature of 85°C.

MT46H128M32L2KQ-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6WT:B is a DDR1 DRAM with 128MX32 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.

MT40A1G16RC-062EIT:BTR

Micron Technology

DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;

IS42SM16200D-6BLI

Integrated Silicon Solution

IS42SM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 3.3V, has dual bank page burst access mode, and offers a max access time of 5.5 ns. Ideal for industrial applications requiring high-speed and reliable memory performance in a compact grid array package.

D2164A-20

Intel

Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.

MT8KTF51264HZ-1G9P1

Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.

IS42S16800F-6BLI-TR

Integrated Silicon Solution

IS42S16800F-6BLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 166 MHz fCLK, 3.3V supply, and -40 to 85°C temp range. Ideal for industrial applications requiring high-speed memory access in a compact GRID ARRAY package.