Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
8,628	$0.052	$450.813

BC547B

Manufacturer

Diotec Semiconductor Ag
Manufacturer's Part Number

BC547B
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet

Datasheet

8628 In Stock

Popular Products

LL4148

Taitron Components

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

STM32H743ZIT6

STMicroelectronics

STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.

Details

EEAGA1H4R7

Panasonic

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

Details

2N2222A

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

2N2222A

Vishay Sprague

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;

Details

SS14

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM107H/883

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

1N4148WT

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Vicor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ABS07-32.768KHZ-T

Abracon

Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.

Details

BSS138

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

Details

1N4148

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

International Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

LAN8720AI-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

LM7805CT

Onsemi

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

2N7002

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;

Details

BC547B Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	300 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	150 Cel
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	200
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	45 V
Peak Reflow Temperature (C):	260

Category Top Products

BC817-25

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

BC817-25W,115

NXP Semiconductors

NXP Semiconductors' BC817-25W,115 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. With a compact small outline package, it features GULL WING terminals for surface mount assembly.

2N3904

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

2N3906

Secos

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

BC847C

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

MMBT3904

Onsemi

MMBT3904 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, hFE of 30, and max. operating temp. of 150°C. Ideal for switching applications due to its small outline package style and high transition frequency of 300MHz. It features Gull Wing terminals in a plastic/epoxy body suitable for surface mount assembly.

2N2905A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

BC846B

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BC817-16LT1G

Onsemi

BC817-16LT1G by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.3W. It has a min DC current gain of 100, operates at temperatures up to 150°C, and can handle a max collector-emitter voltage of 45V. This small outline transistor is ideal for applications requiring high frequency transitions up to 100MHz in surface mount configurations.

SBC846BDW1T1G

Onsemi

SBC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, min DC current gain of 200 (hFE), and operates up to 150°C. This small outline transistor features a max power dissipation of 0.38W in a rectangular package with Gull Wing terminals.

BC846BPN,115

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Form: NO LEAD;

BC817-25

Kingtronics International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BCX19LT1G

Onsemi

BCX19LT1G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 0.225W, and min DC current gain of 40. Ideal for small outline applications, it operates at up to 150°C with a max collector-emitter voltage of 45V. Suitable for surface mount designs requiring a compact rectangular package shape.

BC807-40,215

NXP Semiconductors

NXP Semiconductors' BC807-40,215 is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temp of 150°C and fT of 80MHz, it's ideal for small outline packages in electronic circuits.

2N3904

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

2N2219A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL; Terminal Form: WIRE;

JANTX2N2222AUA

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Terminal Form: NO LEAD;

MMBT5551LT1G

Onsemi

MMBT5551LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 30, and IC of 0.06A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 160V. Its small outline package makes it suitable for surface mount designs.

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;